17ZB1400, Development of SiC based trench type next generation power device,
Kim Sang Gi
Abstract
<연구내용 및 범위> 1. SiC 전력소자 TCAD 시뮬레이션 구축 및 소자 설계 기술 - TCAD Tool을 이용한 SiC 전력소자 시뮬레이션 환경 구축 - 1700V급 SiC 전력소자용 가드링 시뮬레이션 및 설계 - 1700V급 Trench형 SiC Diode/MOSFET 시뮬레이션 및 설계
2. SiC 전력소자 개발을 위한 핵심 공정 기술 개발 - SiC 기판 Trench 식각 공정 및 Trench 게이트 형성 공정기술개발 - 열산화막 및 게이트 절연막 형성 공정기술개발 - 불순물 Doping 및 PN 접합 형성 공정기술개발 - 미세패턴 형성 공정기술개발 - SiC MOSFET 채널 자기정렬 공정기술개발 - Ohmic접촉 형성 공정기술개발
3. 1700V/70A급 Trench형 SiC Diode 및 MOSFET 소자개발 - SiC 다이오드 제작 및 특성평가 - SiC MOSFET 제작 및 특성평가
4. SiC 전력소자의 ESD 보호회로 기술 개발
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