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김도현

Department: RF/Power Components Research Section

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KSP Keywords: T-Gate Head Size Algan/Gan Hemts Radiation Tolerance Gan-Based Wireless Communication Power Amplifiers(PAs) Silicon Substrate High-Electron Mobility Transistor(HEMT) Planar-Gate Higher Frequency Extrinsic Gate Capacitance Hydrogen Silsesquioxane(HSQ) Device Performance Radar System High-Frequency Power Amplifier Frequency Characteristics Dc Characteristics

Articles (3)
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논문 검색결과
Type	Year	Title	Cited	Download
Conference	2024	Impact of T-gate head size on the device performance and radiation tolerance in LG = 0.15 m GaN-based HEMTs S.-J. Chang International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2024, pp.283-283
Journal	2024	Improved frequency performance in AlGaN/GaN HEMTs on Si using hydrogen silsesquioxane-assisted gate Hyun-Wook Jung Materials Science in Semiconductor Processing, v.170, pp.1-5	3
Conference	2024	The Impact of T-Gate Head Size on Radiation Tolerance in GaN HEMTs Sung-Jae Chang 한국반도체 학술대회 (KCS) 2024, pp.397-397

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