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Jaehee Lee
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Next-Generation Semiconductor Device Research Section
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Type Year Title Cited Download
Journal
2025 Solely Light-Induced Integrate-and-Fire 1T-Neuron Operation and Implementation of the McGurk Effect   Jaehee Lee   Small Structures, v.6, no.6, pp.1-10 0
Journal
2025 In vitro recording and stimulation performance of multi-electrode arrays passivated with plasma-enhanced atomic layer-deposited metal oxides   Yong Hee Kim   Nanoscale, v.17, no.14, pp.8731-8740 0
Journal
2025 Synaptic transistor implementing potentiation or depression via field distribution modulation of dual dielectric layers by single-polarity pulsed voltage stimuli   Jieun Kim   Materials Today Advances, v.25, pp.1-9 1
Conference
2024 In vitro Recording/Stimulation Performance of the Neural Electrodes Passivated with Nanoscale Metal Oxides   Yong Hee Kim   한국바이오칩학회 학술 대회 (추계) 2024, pp.1-1
Conference
2024 Simultaneous realization of neuron and synapse functionalities under optical stimulation using a single transistor   Jaehee Lee   Korean International Semiconductor Conference on Manufacturing Technology (KISM) 2024, pp.1-1
Conference
2024 Implementation of Integrate-and-Fire Characteristics Using CMOS-Compatible Oxide based Neuron Transistors   이재희   대한전자공학회 학술 대회 (하계) 2024, pp.377-380
Journal
2024 Replicating the Bright-Light Therapy of Seasonal Affective Disorder Using Dual-Gate Dielectric Synaptic Transistors: An Exploration of Neuromorphic Computing Approaches   Jaehee Lee   ACS APPLIED ELECTRONIC MATERIALS, v.6, no.3, pp.1904-1911 1
Conference
2024 Implementation of Integrate-and-Fire (IF) characteristics using oxide-based 1T-Neuron   Jaehee Lee   한국반도체 학술대회 (KCS) 2024, pp.1-1
Journal
2022 Flexible multilayered transparent electrodes with less than 50 nm thickness using nitrogen-doped silver layers for flexible heaters   Gayoung Kim   Materials Research Bulletin, v.149, pp.1-9 10
Journal
2022 Characteristics of PEALD–Hafnium Dioxide Films and their Application to Gate Insulator Stacks of Photosynaptic Transistors   Jieun Kim   Advanced Electronic Materials, v.8, no.4, pp.1-8 7