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Park Young Sam
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Type Year Title Cited Download
Conference
2024 Free-Standing Sulfide Electrolyte Thin Film for Solid-State Lithium Battery Applications   Seokyoon Yoon   Materials Research Society (MRS) Meeting 2024 (Spring), pp.1-2
Conference
2023 Aqueous Binder-Enabled In-situ Surface Modification of Hydrophobic Separators for Multifunctional Lithium Secondary Batteries   Seok Hun Kang, Ju Young Kim, Hyeong Min Jin  Annual Meeting of the International Society of Electrochemistry (ISE) 2023, pp.1-1
Journal
2023 Multifunctional separators for lithium secondary batteries via in-situ surface modification of hydrophobic separator using aqueous binders   Ju Young Kim, Seok Hun Kang   Surfaces and Interfaces, v.38, pp.1-9 5
Conference
2023 Poly(2-ethyl-2-oxazoline) binder for low-cost and high heat resistant lithium rechargeable battery applications   Jin Young Kim   European Materials Research Society (E-MRS) Meeting 2023 (Spring), pp.1-6
Journal
2023 Effect of Lithium Substitution Ratio of Polymeric Binders on Interfacial Conduction within All-Solid-State Battery Anodes   Dong Ok Shin, Hyungjun Kim  ACS Applied Materials & Interfaces, v.15, no.10, pp.13131-13143 5
Journal
2023 Thermally stable and soft pressure-sensitive adhesive for foldable electronics   Woosung Jo, Kihoon Jeong  Chemical Engineering Journal, v.452, no.1, pp.1-8 12
Journal
2022 Electrolyte-free Graphite Electrode with Enhanced Interfacial Conduction Using Li+-conductive Binder for High-performance All-solid-state Batteries   Dong Ok Shin, Hyungjun Kim, Seungwon Jung  Energy Storage Materials, v.49, pp.481-492 11
Journal
2022 Luminance Enhancement of Top-emitting Blue Organic Light Emitting Diodes Encapsulated with Silicon Nitride Thin Films by a Double-layer Nano-structure   Doo-Hee Cho   Optics Express, v.30, no.7, pp.11959-11972 4
Journal
2021 Synergetic Contribution of Fluorinated Azide for High EQE and Operational Stability of Top-illuminated, Semitransparent, Photomultiplication-type Organic Photodiodes   Juhee Kim, Chul Woong Joo   Materials Horizons, v.8, no.11, pp.3141-3148 17
Journal
2021 Electronic Structure Analysis of Nano-lens Arrays   Jong Tae Lim   Journal of Materials Science, v.56, pp.17674-17681 0
Conference
2021 Water-Soluble Binder/Ceramic Slurries for the Heat Resistant Separators of Lithium-Ion Batteries   Jin Young Kim   International Conference on Advanced Electromaterials (ICAE) 2021, pp.1-1
Conference
2021 Crystallization Assisted Nanolens Array Fabrication and Its Application in Organic Light Emitting Diodes   박영삼   대한금속·재료학회 학술 대회 (추계) 2021, pp.1-1
Conference
2021 Maskless One-step Nano-lens Array Process Facilitated by Crystallization   Young-Sam Park   World Polymer Congress (IUPAC-MACRO) 2020+, pp.1-1
Journal
2021 Formation Behavior of Organic Nano-lens Arrays for Highly Efficient Top-emitting Organic Light Emitting Diode Applications   박영삼   폴리머, v.45, no.1, pp.129-133 0
Journal
2020 Nucleation and Growth of Optically Efficient Organic Nano-lens Arrays Fabricated by a Vacuum Deposition   Young-Sam Park   Thin Solid Films, v.709, pp.1-5 1
Journal
2020 The Formation of An Optically Functional Nano-lens Array by Substrate Surface Treatment   Young-Sam Park   Journal of Materials Science : Materials in Electronics, v.31, no.3, pp.2331-2336 1
Journal
2019 High-performance Fab-compatible Processed Near-infrared Organic Thin-film Photodiode with 3.3×1012 Jones Detectivity and 80% External Quantum Efficiency   Chul Woong Joo, Juhee Kim  Organic Electronics, v.70, pp.101-106 16
Journal
2019 Fab-compatible Nano-lens Array Integration for Optically Efficient Flexible Top-emitting Organic Light-emitting Diodes   Jungyun Kwon, Jehan Kim, Young-Sam Park   Japanese Journal of Applied Physics, v.58, no.SD, pp.1-6 4
Conference
2019 A Highly Mass-producible Nano-lens Array Technology for Optically Efficient Full-color Organic Light Emitting Diode Display Applications   Young-Sam Park, Kyung-Hoon Han  Society for Information Display (SID) International Symposium 2019, pp.149-152 3
Conference
2019 High-performance Vacuum-deposition Processed Near-infrared Organic Photodiode based on Heterojunction of CllnPC and C60   Young-Sam Park   European Materials Research Society (E-MRS) Meeting 2019 (Spring), pp.1-1
Journal
2018 Built-In Haze Glass-Fabric Reinforced Siloxane Hybrid Film for Efficient Organic Light-Emitting Diodes (OLEDs)   Young-Woo Lim  Advanced Functional Materials, v.28, no.33, pp.1-9 32
Journal
2018 Optical Analysis of Power Distribution in Top-Emitting Organic Light Emitting Diodes Integrated with Nanolens Array Using Finite Difference Time Domain   Kyung-Hoon Han, Young-Sam Park   ACS Applied Materials & Interfaces, v.10, no.22, pp.18942-18947 17
Conference
2018 Fabrication of Gas Barrier Equipped Flexible Integrated Substrate for OLED Lighting Panels   O Eun Kwon   Large-area, Organic & Printed Electronics Convention (LOPEC) 2018, pp.1-1
Journal
2017 Flexible Integrated OLED Substrates Prepared by Printing and Plating Process   Doo-Hee Cho   Organic Electronics, v.50, pp.170-176 48
Journal
2017 Crystallization-assisted Nano-lens Array Fabrication for Highly Efficient and Color Stable Organic Light Emitting Diodes   Young-Sam Park   Nanoscale, v.9, no.1, pp.230-236 18
Conference
2016 Low Cost Process for Integrated Substrates of Flexible OLEDs using Printing and Plating   Doo-Hee Cho   International Display Workshops in conjunction with Asia Display (IDW/AD) 2016, pp.782-783 0
Conference
2016 A Diameter Controllable Nano Lens Array Fabrication for Highly Efficient and Color Stable OLEDs Using a Maskless Deposition   Young-Sam Park   International Display Workshops in conjunction with Asia Display (IDW/AD) 2016, pp.740-741 0
Conference
2016 Maskless Integration of Nano Lens Arrays (NLAs) on Inverted Top Emitting Organic Light Emitting Diodes (TEOLEDs) for High Light Extraction Efficiency   Young-Sam Park   Optical Nanostructures and Advanced Materials for Photovoltaics (PV) 2016, pp.1-3 0
Journal
2013 Effect of Silicide/Silicon Hetero-Junction Structure on Thermal Conductivity and Seebeck Coefficient   Choi Wonchul   Journal of Nanoscience and Nanotechnology, v.13, no.12, pp.7801-7805 6
Journal
2013 Seebeck Coefficient Characterization of Highly Doped n- and p-Type Silicon Nanowires for Thermoelectric Device Applications Fabricated with Top-Down Approach   Kim Jaehyeon   Journal of Nanoscience and Nanotechnology, v.13, no.9, pp.6416-6419 12
Journal
2012 Evaluation of Seebeck Coefficients in n- and p-type Silicon Nanowires Fabricated by Complementary Metal-Oxide-Semiconductor Technology   Younghoon Hyun   Nanotechnology, v.23, no.40, pp.1-7 13
Journal
2012 Chalcogenide Programmable Switches with SiGeSb Heating Layers   Seung-Yun Lee  Journal of Non-Crystalline Solids, v.358, no.17, pp.2405-2408 1
Journal
2012 Top-Down Processed Silicon Nanowires for Thermoelectric Applications   Moongyu Jang   Journal of Nanoscience and Nanotechnology, v.12, no.4, pp.3552-3554 7
Journal
2012 Nitrogen Doping Effect in Ag-SbTe Solid Electrolyte for Programmable Metallization Cell Memory   Young-Sam Park   Electronics Letters, v.48, no.8, pp.458-460 2
Journal
2011 Pre-Silicidation Annealing Effect on Platinum-Silicided Schottky Barrier MOSFETs   Myungsim Jun   Semiconductor Science and Technology, v.26, no.12, pp.1-4 0
Conference
2011 Temperature Distribution Analysis of Silicon Nanowire for Thermoelectric Applications   Younghoon Hyun   Nanotechnology Materials and Devices Conference (NMDC) 2011, pp.194-195 0
Journal
2011 Electrical Characterization of n/p-Type Nickel Silicide/Silicon Junctions by Sb Segregation   Myungsim Jun   Journal of Nanoscience and Nanotechnology, v.11, no.8, pp.7339-7342 0
Conference
2011 Chalcogenide Programmable Switches with SiGeSb Heating Layers   Seung-Yun Lee  International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS) 2011, pp.2405-2408 1
Journal
2011 Self-Aligned Formation of Nanoscale Phase Change Materials for Nonvolatile Memory Application   Seung-Yun Lee  Japanese Journal of Applied Physics, v.50, no.6 PART 2, pp.1-5 0
Journal
2011 High Performance Platinum-Silicided P-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors Scaled Down to 30 nm   Myungsim Jun   Journal of Vacuum Science and Technology B, v.29, no.3, pp.1-4 1
Conference
2010 Implementation of Silicon Nanowire based Thermoelectric Device using Top-down Approach   Moon Gyu Jang   International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE) 2010, pp.1-2
Conference
2010 Temperature Coefficient of Resistance (TCR) Characteristics of Platinum Heaters for Silicon Thermoelectric Device Applications   Young-Sam Park   International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE) 2010, pp.213-213
Journal
2010 The Characteristics of Seebeck Coefficient in Silicon Nanowires Manufactured by CMOS Compatible Process   Moongyu Jang   Nanoscale Research Letters, v.5, no.10, pp.1654-1657 15
Journal
2010 Phase-Change Memory Device Fabricated Using Solid-State Alloying   S.-Y. Lee  Electronics Letters, v.46, no.9, pp.652-654 5
Journal
2010 Effect of Annealing Temperature on the Operation of Phase-Change Memory   이승윤  한국진공학회지, v.19, no.2, pp.155-160
Conference
2010 Electrical Characteristics of NiSi/Si Junction Using Sb Interlayer   전명심   한국 반도체 학술 대회 (KCS) 2010, pp.230-231
Conference
2009 CMOS Compatible Phase-Change Memory Device for Low Power Consumption   Young Sam Park   International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS) 2009, pp.1-2
Journal
2009 Improvement of Operational Stability in SET States of Phase-Change-Type Nonvolatile Memory Devices using Sb-Rich Phase of Ge-Sb-Te Alloys   Sung Min Yoon   Solid-State Electronics, v.53, no.5, pp.557-561 6
Journal
2009 Phase-Change-Driven Programmable Switch for Nonvolatile Logic Applications   Sung Min Yoon   IEEE Electron Device Letters, v.30, no.4, pp.371-373 16
Journal
2009 Enhanced Memory Behavior in Phase-Change Nonvolatile-Memory Devices Using Multilayered Structure of Compositionally Modified Ge-Sb-Te Films   Sung Min Yoon   Japanese Journal of Applied Physics, v.48, no.4, pp.1-6 1
Journal
2009 Control of the Thickness and Length of Germanium-Telluride Nanowires Via the Vapor-Liquid-Solid Method   Soon Won Jung   Journal of the Korean Physical Society, v.54, no.2, pp.653-659 6
Journal
2008 Process Compatible Silicon-germanium-antimony Heating Layer for High Density Phase-change Memory Applications   Seung-Yun Lee   Microelectronic Engineering, v.85, no.12, pp.2342-2345 5
Journal
2008 Fabrication and Electrical Characterization of Phase-change Memory Devices with Nanoscale Self-heating-channel Structures   Sung-Min Yoon   Microelectronic Engineering, v.85, no.12, pp.2334-2337 11
Journal
2008 Stress Reduction of Ge2Sb2Te5 by Inhibiting Oxygen Diffusion   Young Sam Park   Materials Transactions, v.49, no.9, pp.2107-2111 1
Journal
2008 Research Trend of Programmable Metalization Cell (PMC) Memory Device   박영삼   한국진공학회지, v.17, no.4, pp.253-261
Journal
2008 Nonvolatile Memory-Switching Behaviors of Phase-Change Memory Devices Using Ti-Si-N Heating Layers   Sung-Min Yoon   Journal of the Electrochemical Society, v.155, no.6, pp.H421-H425
Conference
2008 A Resistive Switch Device Based on SbTeN Chalcogenide Film   Young Sam Park   Silicon Nanoelectronics Workshop (SNW) 2008, pp.1-2 2
Conference
2008 Control of the Thickness and Length of GeTe Nanowires Grown via the VLS Method   Soon-Won Jung   MRS Meeting 2008 (Spring), pp.1-1
Journal
2008 Bilayer Heater Electrode for Improving Reliability of Phase-Change Memory Devices   Seung-Yun Lee   Journal of the Electrochemical Society, v.115, no.5, pp.H314-H318 7
Conference
2008 Phase-Change Memory Devices Employing SiGe Heating Layers   이승윤   한국 반도체 학술 대회 (KCS) 2008, pp.33-34
Journal
2007 Electrical Characterization of Nonvolatile Phase-Change Memory Devices Using Sb-Rich Ge-Sb-Te Alloy Films   Sung-Min Yoon   Japanese Journal of Applied Physics, v.46, no.11, pp.7225-7231 17
Journal
2007 Silicon-based Thin Films as Bottom Electrodes in Chalcogenide Nonvolatile Memories   Seung-Yun Lee   Applied Surface Science, v.254, no.1, pp.312-315 3
Journal
2007 Stress Reduction During Phase Change in Ge2Sb2Te5 by Capping TiN Film   Young Sam Park   Journal of Materials Science : Materials in Electronics, v.18, no.10, pp.1079-1082 6
Journal
2007 Nonvolatile Programmable Metallization Cell Memory Switching Element based on Ag-doped SbTe Solid Electrolyte   Young Sam Park   Applied Physics Letters, v.91, no.16, pp.1-3 7
Conference
2007 Stress Reduction of Ge2Sb2Te5 Crystallization by Capping Al2O3 Film Grown by PEALD   Young Sam Park   The Electrochemical Society (ECS) Meeting 2007 (212th), pp.1-1
Journal
2007 Stress Reduction of Ge2Sb2Te5 Crystallization by Capping Al2O3 Film Grown by PEALD   Young Sam Park   ECS Transactions, v.11, no.7, pp.245-248 2
Journal
2007 Time Dependent Resistance Change of Amorphous Phase in Phase-Change Nonvolatile Memories   Sung-Min Yoon   Integrated Ferroelectrics, v.93, no.1, pp.83-89 2
Journal
2007 Effects of Barrier Layers on the Electrical Behaviors of Phase-Change Memory Devices Using Sb-rich Ge-Sb-Te Films   Sung-Min Yoon   Integrated Ferroelectrics, v.93, no.1, pp.75-82 4
Journal
2007 Low Power and High Speed Phase-change Memory Devices with Silicon-germanium Heating Layers   Seung-Yun Lee   Journal of Vacuum Science and Technology B, v.25, no.4, pp.1244-1248 16
Journal
2007 Nanoscale Observations on the Degradation Phenomena of Phase-Change Nonvolatile Memory Devices Using Ge2Sb2Te5   Sung-Min Yoon   Japanese Journal of Applied Physics, v.46, no.4, pp.L99-L102 18
Journal
2006 Dry Etching of Ge2Sb2Te5 Thin Films into Nanosized Patterns Using TiN Hard Mask   Sung Min Yoon   Japanese Journal of Applied Physics, v.45, no.40, pp.1080-1083 21
Journal
2006 Sb-Se-Based Phase-Change Memory Device With Lower Power and Higher Speed Operations   Sung Min Yoon   IEEE Electron Device Letters, v.27, no.6, pp.445-447 111
Conference
2006 Phase Change Memory Device with U-shaped Heater (PCM-U)   Young Sam Park   European Phase Change and Ovonic Symposium (EPCOS) 2006, pp.1-4
Journal
2006 Writing Current Reduction in Phase Change Memory Device with U-Shaped Heater (PCM-U)   Young Sam Park   Japanese Journal of Applied Physics, v.45, no.20, pp.516-518 16
Conference
2006 Stack-Structured Phase Change Memory Cell for Multi-State Storage   Sang Ouk Ryu   Materials Research Society 2006 (Spring), pp.1-1
Conference
2005 Research and Development on Next-Generation Nonvolatile Memory in ETRI   Byoung Gon Yu   Symposium on Semiconductors and Integrated Circuits Technology, pp.1-4
Journal
2005 The Prospect of the Phase-change Random Access Memory Technology   박영삼   전자통신동향분석, v.20, no.6, pp.62-69
Journal
2005 Highly Reliable Flash Cell for Low Power Application   Young Sam Park   Japanese Journal of Applied Physics, v.44, no.11, pp.7816-7819 1
Journal
2005 Etching Characteristics of Ge2Sb2Te5 Using High-Density Helicon Plasma for the Nonvolatile Phase-Change Memory Applications   Sung Min Yoon   Japanese Journal of Applied Physics, v.44, no.24-27, pp.L869-L872 35