ETRI-Knowledge Sharing Plaform

Active Layer Highly Efficient Subthreshold Swing(SS) Oled Lighting Graphene Anode Light Extraction Efficiency Nano-Structures Gate Insulator Top-Gate Rf Magnetron Sputtering Light Source Room Temperature White Oleds Zn-Sn-O(ZTO) Large Area Post-Annealing Al-Zn High Refractive Index Vdf-Trfe(PZT/P) Luminous Efficacy Graphene Films Oxide Tfts Luminance Distribution Smart Lighting Transparent Organic Light-Emitting Diodes Double Layered Vinylidene Fluoride-Co-Hexafluoropropylene(Poly) Igzo Tfts Electrochromic Devices Random Scattering Bias Stability Flexible Oled Extraction Structure Surface Tension(ST) Top-Emitting Surface Roughness Gate Voltage Oxide Thin-Film Transistors Low-Cost Low Temperature Scattering Effect Bottom Gate Structure Simulation Results Highly Transparent Atomic Layer Deposition Transparent Electrode Zinc Tin Oxide(ZTO) Oxide Thin Films Al-Doped Capping Layer Fabrication Process Organic Light-Emitting Devices Turn-On Voltage O 3 Gate Leakage Current Color Rendering Index Aqueous Solution Emission Spectra Transparent Thin Film Transistor(TTFT) Indium Tin Oxide(ITO) External Light Spectral Stability Vacuum Deposition Top Emission And Gate Igzo Thin Film Total Efficiency Threshold Voltage(Vth) High Performance Current Efficiency Oxide Material Drying Condition Transparent Cathode Components Technology Spectral Matching Oled Devices Compound Semiconductor Image Blurring Display Applications Transparent Film Dry Process Memory Window Light Scattering Layer Aperture Ratio Electroless Copper Plating High External Quantum Efficiency Channel Layer Cds Thin Films Finite-Difference Time-Domain(FDTD) Grazing Incidence Small-Angle X-Ray Scattering On/Off Current Ratio Process Parameters Electrical Characteristics Root-Mean-Square(RMS) Zinc Indium Oxide Display Panel Cds Film Optical Effects Blue Organic Light Emitting Diodes Electron Injection Layer High Transmittance Organic Vapor Phase Deposition Amorphous Igzo Efficiency Improvement Temperature Stability Device Stability Anode Materials Dry Etching Phosphorescent Oled Hole Injection Layer One-Step Active Channel Guided Modes Planar Structure Silver Paste Circuit Modeling Efficiency Enhancement National Defense Titanium Oxide Spin-Coated Electrical Performance Organic Molecules Transparent Electronics Fiber Fabrication Polymer Electrolytes Lighting Panel Oxide Layer Gate Electrode Graphene Electrode Optical Sensing Nonvolatile Memory Transistors Platform Development Color Stability Structural Characterization(Microstructure) Screen Printing Blue Pholeds Tio 2 P-Type Co-Planar Microlens Array Ultra-Thin Chemical Bath Deposition(CBD) Silica Fiber Initialization Vector(IV) Er-Doped Waveguide Mode Vth Shift Film Thickness Flat Gain Active Devices Film Drying Optical And Electrical Properties Process Temperature Out-Coupling Efficiency Total Emission Ferroelectric Polymer(PVDF) Glass Plate Bias Stress Passivation Layer Two-Dimensional(2D) Surface Treatments Flexible Device Color Change Stimulated Raman Scattering Color Tunable Tail States Atomic Force Microscope(AFM) Information Display Sn-Doped Blue Phosphorescent Organic Light-Emitting Diodes Blue Oleds Integrated Substrate Cost-Effective L-Band Voltage Sweep Top Electrode Annealing Temperature Rectifying Characteristics Tunable Light Formation Mechanism Nano-Scale 5 Nm Blue Fluorescence Device Characteristics Fabrication And Characterization Wrinkle Structures Silicon Wafer Surface Morphology Drain Current N-Dimethyl Acetamide Deposition Process Analytical Modeling Device Configuration Fabrication Technology Laser Scanning Electrical Conductivity Co-Sputtering Deposition Method Laser System Wet Method Brightness Uniformity Electrical Characterization Electro-Optical Light Sensing Oled Pixels Photo Response Pulse Amplitude Surface Modification Transfer Method Oxygen Plasma Treatment Phosphorescence Oleds Transparent Conductive Substrate Surface Energy Vibration Characteristics Ag Layer Ag Cathode In-Sn Layer Effect Thin Film Encapsulation Uv-Curing Thermoelectric Device Nano-Patterned Silver Nanowires(AgNWs) Air Interface Immiscible Polymer Blend Nano And Microstructures Nondestructive Readout Operation Power Distribution 1064 Nm Color Temperature Operating Voltage Optical Analysis Electrical And Optical Properties Polymer Surfaces Semiconducting Channel Titanium(Iv) Butoxide Incident Angle Formation Process Growth Behavior Number Of Graphene Layers Stress Release Device Performance Flexible Electronics Highly Conductive 2 Mm Size Controllability Smart Window Electrochromic Materials Moisture Exposure Tft Array Efficiency Limit Organic And Inorganic Compounds Electrode Structure Ultraviolet Light Short-Length Silica Core Silver Nanodots Amoled Display Enhanced Efficiency Emission Intensity Industry-Compatible Lattice Vacancy Information And Communication Silicon Heterojunction Silicon Oxide Chemical Vapor Deposited Intensity Ratio Two-Step Annealing Two Layers Lighting Applications Ferroelectric Gate Triethylene Glycol Current-Voltage (I-V) Characteristics Electronic Properties Fiber Materials Actuator Model Bottom Contact Edge Shape Image Quality Degradation Laser Power Organic And Inorganic Materials Zn Oxide Stability Model Chemical Etching Dielectric Layer Gibbs Free Energy Wavelength-Selective Optimized Condition Luminous Efficiency Oxide Gate Vacuum Annealing Small Form Factor Constant Current(CC) Flexible Electronic Devices Ionized Physical Vapor Deposition Metal Mask Wide Range Nanostructured Substrate Guided Light Color Quality Electrical Resistance Full-Color Fully Depleted(FD) Glass Surface Integrated Circuit(IC) Extraction Technology Trap Density Device Efficiency Hot Plate Hole Transporting Layer Optical Absorption Sensor Node Silicon Nitride Substrate Low Sheet Resistance Post-Heat Treatment Patterned Anode Substrate Material Co. Kgaa Colloidal Sol Red Phosphorescent Near-Infrared Exponential Distribution Contact Angle(CA) Material System Work Function Modification Uniform Light Plasma Effects Plasma Power Surface-Modified Current Stress Enhanced Transmittance Morphological Changes White Light Voltage-Dependent Interface Formation Mobile Electronics Oxide Channel Optical Characteristics Peak Power Efficiency Protection Layer Plasma Process Smooth Surface Structural Optimization Cu-Doped Zno Device Design Electric Field Encapsulation Material Optical Contrast Physical Model Polyvinyl Acetal Structural And Optical Properties Current On-Off Ratio Interface Roughness White Color Organic Additives New Approach Voltage Pulse High Efficiency High Color Rendering Inorganic Films Potential Applications Solution-Processed 9-Dimethyl-4 Colorless Polyimide Device Structure Efficacy Enhancement High Brightness Hybrid Cathode Organic-Inorganic Hybrid Films Optical Devices Optical Scattering Zno Layer 77.80.-E Alumina Substrate Channel Material Electron Transport Layer Geometrical Optimization Overall Performance Red Phosphorescence Fiber Amplifier Aspect Ratio Heat Stress Low Voltage Organic Passivation Nano-Crystalline Tunable White Inductively Coupled Plasma(ICP) Channel Thickness Hard Mask Linear Stability Thermodynamic Theory Panel Design Transparent Tft Simulation Method Functional Layer Luminance Uniformity Optical Cavity Ratio Of Current Array Process Colloidal Particles Back Channel Fdtd Simulation Light Exposure Memory Cell Optical Communications Phases Separation Polymer Materials Control Device Energetic Bombardment Engineering Approach High Resolution Gel Electrolyte Power Mode Production Process Simulation And Measurement Vacancy Diffusion Combinatorial Method Monitoring Method Processing Route Scanning Electron Microscope Diameter Controllable Driving Circuit Gate Stack Laser Patterning Practical Approach Spectral Distribution Angular Spectrum Patterning Method Photolithography Process Controlling Process Focal Position Gas Barrier Nano Composite Deposition Technique Cathode Film Extraction Method Fluorescence Materials Random Structure Gas Mixtures Zno Thin Films Time-Domain Simulations Blue Phosphorescence Cell Structure Color Coordinates Defects Formation Luminance Efficiency High-Electron Mobility Transistor(HEMT) Transparent Oxide Semiconductor N-Type Doping Nucleation And Growth 10-Phenanthroline Spin-Coating Method Active Matrix Coupling Layer Highly Stable Ingazno Tfts Modeling Method Multimode Interference (Mmi) Coupler Number Of Layers Positive Bias Transparent Display Emission Area Infrared Laser J-V Characteristics Optical Losses Organic Ferroelectric Materials Properties Change Applied Physics Multi-Component Stainless Steel(SUS316) And Reflection Amorphous Oxide Semiconductor Contact Configuration Energy Saving Devices Thermal Activation Energy Surface Control Driving Current Energy-Efficient Protective Layer Red Emission Curing Process Fluorescent Organic Light-Emitting Diodes High Field-Effect Mobility Mass Diffusion Water Vapor Scanning Speed Channel Length Fluoride Glasses Hole Transport Layer Ag Film Continuous Surface High Tolerance Phosphorescent Materials New Type Asymmetric Structure Based Approach Film-Type Fiber Length Flexible Electrochromic Device Off-Axis T-Type Spontaneous Formation Coupling Characteristics Optical Disk Drive Transistor-Type 7-Diphenyl-1 Gate Oxide Mass Production External Actions Doping Method Hybrid Solutions Programming Characteristics Perturbation Analysis Photo Resist Radiative Transition Single-Layer Graphene Weak Microcavity Effect Scattering Experiments Vertical Coupling Conductive Oxide Electronic Circuit High Mobility Transistor Interfacial Trap Ostwald Ripening Pulse Duration Er Ions Multi-Layered Graphene Measurement Results Temperature Increase Solid Polymer Composite Layer Electromagnetic Waves Luminance Enhancement Tft Technology Highly Refractive Model-Based Technical Development Wide Viewing Angle Thermal Stress Spectral Changes Signal Gain Angle Independent Array Technology Manufacturing Processes Optical Transparency Patterned Ito Subthreshold Slope(SS) Composition Ratio High Light Gate Bias Transparent Flexible Electrode Negative Shift New Method Surface Conditions Spectroscopic Properties Flat Glass Substrate Wet Etching Process Thermal Release High Cri Maskless Deposition Retention Time Roughness Effects Response Time Electron Transporting Layer Semiconductor Films 7 Mm