ETRI-Knowledge Sharing Plaform

Active Layer Highly Efficient Subthreshold Swing(SS) Oled Lighting Graphene Anode Light Extraction Efficiency Nano-Structures Gate Insulator Top-Gate Rf Magnetron Sputtering Light Source Room Temperature White Oleds Zn-Sn-O(ZTO) Large Area Post-Annealing Al-Zn High Refractive Index Vdf-Trfe(PZT/P) Luminous Efficacy Graphene Films Oxide Tfts Luminance Distribution Smart Lighting Transparent Organic Light-Emitting Diodes Double Layered Vinylidene Fluoride-Co-Hexafluoropropylene(Poly) Igzo Tfts Electrochromic Devices Random Scattering Bias Stability Flexible Oled Extraction Structure Surface Tension(ST) Top-Emitting Surface Roughness Gate Voltage Oxide Thin-Film Transistors Low-Cost Low Temperature Bottom Gate Structure Scattering Effect Simulation Results Highly Transparent Atomic Layer Deposition Transparent Electrode Zinc Tin Oxide(ZTO) Oxide Thin Films Al-Doped Capping Layer Fabrication Process Organic Light-Emitting Devices Turn-On Voltage O 3 Gate Leakage Current Color Rendering Index Aqueous Solution Emission Spectra Transparent Thin Film Transistor(TTFT) External Light Indium Tin Oxide(ITO) Spectral Stability Vacuum Deposition Top Emission And Gate Igzo Thin Film Total Efficiency Threshold Voltage(Vth) High Performance Current Efficiency Oxide Material Oled Displays Drying Condition Transparent Cathode Components Technology Spectral Matching Oled Devices Compound Semiconductor Image Blurring Display Applications Transparent Film Dry Process Memory Window Light Scattering Layer Aperture Ratio Electroless Copper Plating High External Quantum Efficiency Channel Layer Cds Thin Films Finite-Difference Time-Domain(FDTD) Grazing Incidence Small-Angle X-Ray Scattering On/Off Current Ratio Process Parameters Electrical Characteristics Root-Mean-Square(RMS) Zinc Indium Oxide Display Panel Cds Film Optical Effects Blue Organic Light Emitting Diodes Electron Injection Layer High Transmittance Organic Vapor Phase Deposition Amorphous Igzo Efficiency Improvement Temperature Stability Device Stability Anode Materials Dry Etching Phosphorescent Oled Hole Injection Layer One-Step Active Channel Guided Modes Planar Structure Silver Paste Circuit Modeling Efficiency Enhancement National Defense Spin-Coated Titanium Oxide Electrical Performance Organic Molecules Transparent Electronics Fiber Fabrication Polymer Electrolytes Lighting Panel Oxide Layer Gate Electrode Graphene Electrode Optical Sensing Nonvolatile Memory Transistors Platform Development Color Stability Structural Characterization(Microstructure) Screen Printing Blue Pholeds Tio 2 P-Type Co-Planar Microlens Array Ultra-Thin Chemical Bath Deposition(CBD) Initialization Vector(IV) Silica Fiber Er-Doped Waveguide Mode Vth Shift Film Thickness Flat Gain Film Drying Active Devices Optical And Electrical Properties Process Temperature Out-Coupling Efficiency Total Emission Ferroelectric Polymer(PVDF) Glass Plate Bias Stress Passivation Layer Two-Dimensional(2D) Surface Treatments Flexible Device Color Change Color Tunable Stimulated Raman Scattering Tail States Atomic Force Microscope(AFM) Information Display Blue Phosphorescent Organic Light-Emitting Diodes Sn-Doped Blue Oleds Integrated Substrate Cost-Effective L-Band Voltage Sweep Top Electrode Annealing Temperature Rectifying Characteristics Tunable Light Formation Mechanism Nano-Scale Blue Fluorescence Device Characteristics Fabrication And Characterization 5 Nm Wrinkle Structures Drain Current N-Dimethyl Acetamide Surface Morphology Silicon Wafer Deposition Process Analytical Modeling Electrical Conductivity Device Configuration Fabrication Technology Laser Scanning Deposition Method Co-Sputtering Laser System Wet Method Brightness Uniformity Electro-Optical Electrical Characterization Light Sensing Oled Pixels Photo Response Pulse Amplitude Surface Modification Oxygen Plasma Treatment Phosphorescence Oleds Transfer Method Transparent Conductive Substrate Surface Energy Vibration Characteristics Ag Cathode Ag Layer In-Sn Layer Effect Nano-Patterned Silver Nanowires(AgNWs) Thin Film Encapsulation Thermoelectric Device Uv-Curing Air Interface Immiscible Polymer Blend Nondestructive Readout Operation Power Distribution 1064 Nm Nano And Microstructures Color Temperature Operating Voltage Optical Analysis Semiconducting Channel Electrical And Optical Properties Polymer Surfaces Titanium(Iv) Butoxide Formation Process Growth Behavior Incident Angle Number Of Graphene Layers Stress Release Device Performance Flexible Electronics Highly Conductive Electrochromic Materials Moisture Exposure Size Controllability 2 Mm Tft Array Efficiency Limit Organic And Inorganic Compounds Electrode Structure Short-Length Ultraviolet Light Amoled Display Emission Intensity Enhanced Efficiency Information And Communication Industry-Compatible Lattice Vacancy Silver Nanodots Silica Core Silicon Heterojunction Chemical Vapor Deposited Intensity Ratio Silicon Oxide Two-Step Annealing Two Layers Triethylene Glycol Ferroelectric Gate Lighting Applications Current-Voltage (I-V) Characteristics Electronic Properties Fiber Materials Actuator Model Bottom Contact Edge Shape Image Quality Degradation Laser Power Organic And Inorganic Materials Zn Oxide Chemical Etching Dielectric Layer Gibbs Free Energy Stability Model Wavelength-Selective Luminous Efficiency Oxide Gate Vacuum Annealing Constant Current(CC) Flexible Electronic Devices Guided Light Ionized Physical Vapor Deposition Metal Mask Nanostructured Substrate Small Form Factor Wide Range Full-Color Color Quality Device Efficiency Electrical Resistance Extraction Technology Fully Depleted(FD) Glass Surface Integrated Circuit(IC) Trap Density Hole Transporting Layer Hot Plate Optical Absorption Sensor Node Silicon Nitride Substrate Low Sheet Resistance Patterned Anode Post-Heat Treatment Substrate Material Co. Kgaa Colloidal Sol Near-Infrared Red Phosphorescent Contact Angle(CA) Exponential Distribution Material System Plasma Effects Plasma Power Uniform Light Work Function Modification Current Stress Enhanced Transmittance Morphological Changes Surface-Modified White Light Voltage-Dependent Interface Formation Mobile Electronics Oxide Channel Optical Characteristics Peak Power Efficiency Protection Layer Plasma Process Device Design Cu-Doped Zno Electric Field Encapsulation Material Optical Contrast Polyvinyl Acetal Physical Model Smooth Surface Structural Optimization Structural And Optical Properties Current On-Off Ratio Interface Roughness New Approach Organic Additives White Color High Efficiency High Color Rendering Inorganic Films Potential Applications Smart Windows Solution-Processed 9-Dimethyl-4 Voltage Pulse Hybrid Cathode Colorless Polyimide Device Structure Efficacy Enhancement High Brightness Optical Scattering Organic-Inorganic Hybrid Films Optical Devices 77.80.-E Zno Layer Alumina Substrate Channel Material Electron Transport Layer Fiber Amplifier Geometrical Optimization Overall Performance Red Phosphorescence Heat Stress Low Voltage Nano-Crystalline Organic Passivation Aspect Ratio Tunable White Channel Thickness Hard Mask Linear Stability Optimized Conditions Panel Design Thermodynamic Theory Transparent Tft Inductively Coupled Plasma(ICP) Simulation Method Functional Layer Luminance Uniformity Optical Cavity Ratio Of Current Fdtd Simulation Array Process Back Channel Colloidal Particles Light Exposure Memory Cell Phases Separation Optical Communications Polymer Materials Simulation And Measurement Control Device Engineering Approach Energetic Bombardment High Resolution Gel Electrolyte Power Mode Production Process Combinatorial Method Monitoring Method Processing Route Vacancy Diffusion Driving Circuit Diameter Controllable Gate Stack Laser Patterning Practical Approach Scanning Electron Microscope Angular Spectrum Photolithography Process Spectral Distribution Patterning Method Controlling Process Deposition Technique Focal Position Gas Barrier Nano Composite Gas Mixtures Cathode Film Extraction Method Fluorescence Materials Random Structure Zno Thin Films Time-Domain Simulations Blue Phosphorescence Cell Structure Color Coordinates Defects Formation Luminance Efficiency High-Electron Mobility Transistor(HEMT) Nucleation And Growth N-Type Doping 10-Phenanthroline Transparent Oxide Semiconductor Active Matrix Coupling Layer Highly Stable Ingazno Tfts Modeling Method Multimode Interference (Mmi) Coupler Number Of Layers Positive Bias Spin-Coating Method Transparent Display Emission Area Infrared Laser J-V Characteristics Optical Losses Organic Ferroelectric Materials Properties Change Multi-Component Applied Physics Stainless Steel(SUS316) Amorphous Oxide Semiconductor Contact Configuration Energy Saving Devices And Reflection Thermal Activation Energy Driving Current Energy-Efficient Protective Layer Red Emission Surface Control Curing Process Fluorescent Organic Light-Emitting Diodes High Field-Effect Mobility Mass Diffusion Water Vapor Channel Length Fluoride Glasses Hole Transport Layer Scanning Speed Ag Film Continuous Surface High Tolerance New Type Phosphorescent Materials Asymmetric Structure Based Approach Fiber Length Film-Type Flexible Electrochromic Device Off-Axis T-Type Coupling Characteristics Optical Disk Drive Spontaneous Formation 7-Diphenyl-1 Transistor-Type Gate Oxide Mass Production Hybrid Solutions Doping Method External Actions Programming Characteristics Perturbation Analysis Photo Resist Radiative Transition Single-Layer Graphene Scattering Experiments Weak Microcavity Effect Vertical Coupling Conductive Oxide Electronic Circuit High Mobility Transistor Interfacial Trap Ostwald Ripening Pulse Duration Er Ions Multi-Layered Graphene Measurement Results Temperature Increase Composite Layer Electromagnetic Waves Luminance Enhancement Solid Polymer Tft Technology Wide Viewing Angle Highly Refractive Model-Based Thermal Stress Technical Development Angle Independent Array Technology Manufacturing Processes Optical Transparency Patterned Ito Spectral Changes Subthreshold Slope(SS) Signal Gain Composition Ratio High Light Gate Bias Negative Shift Transparent Flexible Electrode New Method Surface Conditions Flat Glass Substrate Spectroscopic Properties Thermal Release Wet Etching Process Semiconductor Films Electron Transporting Layer High Cri Maskless Deposition Roughness Effects Response Time Retention Time 7 Mm