ETRI-Knowledge Sharing Plaform

Oxide Thin-Film Transistors Transparent Thin Film Transistor(TTFT) Top-Gate Gate Insulator Active Layer Oxide Tfts Room Temperature Field-Effect Mobility Touch Screen Panel(TSP) Amorphous Indium-Gallium-Zinc Oxide(a-IGZO) Transparent Electrode Ionized Physical Vapor Deposition Ito Films Drain Current Transparent Electronics Subthreshold Swing(SS) Smart Windows Bias Stability Zinc Tin Oxide(ZTO) Applied Physics Touch Sensor Rf Magnetron Sputtering Tail States Transparent Heaters Igzo Thin Film Current On-Off Ratio Post-Annealing Glass Substrate Double-Channel Double Layered Dielectric Layer Er Doping Optical Transmittance Zn-Sn-O(ZTO) High Performance Cu-Doped Zno Structural And Optical Properties Bottom Gate Structure Highly Transparent Atomic Ratio Zno Thin Films Electrical Performance High-Density Electrical Stability Positive Bias Dc Magnetron Sputtering Oxide Thin Films Mobility Fluctuation Reactive Sputtering Ti-Doped Ito Capacitive Touch Screen Silicon Quantum Dots Vapor Deposition Method Turn-On Voltage Nonvolatile Memory Devices Channel Length Charge Trapping Mo-Doped Zno(ZnO:Mo) Stress Test Gate Oxide Doping Method Initialization Vector(IV) Vdf-Trfe(PZT/P) Rf Power Aperture Ratio Subthreshold Slope(SS) Single-Layer Channel Layer Al-Zn Electrical Characteristics Wet Etching Process Constant Current Stress Sputtering Process A-Igzo Tfts Optical And Electrical Properties Silver Nanowires(AgNWs) 20 Nm Zno Electrode Buffer Layer Low Temperature Processing Multilayer Electrode Low-Frequency Noise Flexible Device Gate Voltage Noise Power Communication Technologies Indium Tin Oxide Electrodes Ito Thin Film Small Form Factor Wide Range Channel Structure Comparative Study Ag Nanowires Normalized Noise Voltage-Dependent Hybrid Electrodes Oxidizing Atmosphere Analytical Modeling Seed Layer Gate Dielectric High Sensitivity Process Development Amorphous Igzo 1 H Combinatorial Method Dry Etching Active Channel Large Size Gas Mixtures Source And Drain Cell Patterns Doped Zno Films Next-Generation Active Matrix Icp Power Transparent Display Multilayer Films O 3 Photogenerated Holes Supersaturation Ratio Compositional Ratios Blu-Ray Gallium Nitride Hybrid-Type High Capacitance Layer Composition Off Current Quartz Tube Sputtering Target Surface Uniformity P-Gan Gate Leakage Current High Linearity Ict Convergence Multi-Touch Optoelectronic Devices Process Temperature High Speed Improved Crystallinity Transparent Conductive Ag Layer Carrier Concentration Etching Selectivity Layer Effect P-Type Conductivity Sputter Deposition Effect Of Oxygen Wavelength Range Re-Sputtering Small Area Gan-Based Leds Sn-Doped Zno Device Applications Electrical And Optical Properties Non-Uniformity Technology Study Reliable Transfer Electric Car Formation Process Tin Oxide Films New Device Bond Enthalpy Device Performance Flexible Electronics Highly Conductive Low Light Sputtering Pressure Metal Nanowires Tilt Margin Enhanced Mobility Gas-Phase Reactions Transparent Memristor Rf Sputtering Surface Roughness Data Storage Low Resistivity Output Current Pressure Sensitive Thermal Sensors Amoled Display Good Crystallinity Ti Thin Film Zno Target Contact Electrodes Large Area Devices Two-Step Annealing Radio-Frequency Silicon Oxide Thermal Stability Mobile Devices Applied Voltage E-Beam Light Scattering Current-Voltage (I-V) Characteristics Charge Injection Electronic Properties Generic Technology Information Display Remote Phonon Scattering Anneal Treatment Edge Shape Optimum Condition Organic And Inorganic Materials Zn Oxide Cover Layer Digital Information Drain Electrode Flexible Sensors Mobile Charges Orders Of Magnitude Thermal Annealing 5 Mol%(MgO) Current Spreading Hysteresis Curve Oxide Gate Process Window Post-Deposition Treatment Combinatorial Approach Flexible Electronic Devices I-V Measurement Interfacial Layer Oxygen Bonding Power-Law Heat-Treated Vacuum Annealing Glass Surface Open Technology Polyethylene Terephthalate (Pet) Substrates Dielectric Materials Flat Panel Display Hole Type Ion Beam Deposition Voltage Sweep 3.5 Mm Gate Bias Stress Low Sheet Resistance Post-Heat Treatment Red Emitting In-Sn-Zn-O Long Distance Relative Intensity Rectifying Characteristics Current-Voltage Measurements Exponential Distribution Plasma Effects Plasma Power Uv Lamp Stability Characteristics Rf Magnetron Co-Sputtering Constant Dc Ferroelectric Polarization Low Temperature Fabrication Magnetron Co-Sputtering System Metallic Sb Contact Hole Device Characteristics Fabrication And Characterization Interface Formation Infrastructure Support Long-Run Out-Diffusion Oxide Channel Pulse Width Protection Layer Plasma Process 5 Nm Xrd Measurements Cu-Contamination Physical Model Technical Barrier Smooth Surface Doped Sno 2 Interface Roughness Oxide Material Plasma Density Selective Epitaxial Growth(SEG) Dc Power Supply Electron Beam Irradiation Gan Led High Yield Metal-Doped Potential Applications Organic-Inorganic Solution-Processed 1/F Noise Device Structure Light Output Power Low Transmittance Overdrive Voltage Enhancement Mode(E-mode) Channel Material Metal Electrode Overall Performance Optoelectrical Properties Oled Displays X-Ray Photoelectron Spectroscopy (Xps) Silicon Nitride Film Band-Gap Energy Led Applications Nano-Crystalline Pl Intensity Thermal Process Large-Area Electronics Transparent Tft Inductively Coupled Plasma Reactor Azo Film Binding Energy Metallic Zinc Temperature Stability Doped Oxide Ti Film Back Channel Chemically Strengthened Glass Device Stability Mobile Data Polymer Materials Work Function Zinc-Doped Series-Connected Energetic Bombardment Frequency Range Low Pressure Chemical Vapor Deposition(LPCVD) Metal Foil Transparent Contact Layer Atomic Layer Deposition Compensation Effect Device Degradation Processing Diagrams Density Of Trap States Dependence Of Threshold Voltage Planar Structure Photolithography Process Mobile Device Application Doping Effects Process Optimization Potassium Ions Cell Structure Defects Formation Flexible Pressure Sensors Ga Content High Transparency High-Electron Mobility Transistor(HEMT) N-Type Doping Rewritable Optical Disks Transparent Oxide Semiconductor Photonic Integrated Circuits(PICs) Zn Concentration Ito Electrode Highly Stable Ingazno Tfts Roll-To-Roll Spin-Coating Method Ag Deposition Capacitive-Type Organic Ferroelectric Materials Threshold Voltage Shift Trap Sites Good Stability First Stokes(S1) Gate Electrode Multi-Component Optical Recording System Positive And Negative Technology Infrastructure Single Channel Scattering Parameters(S-parameters) Zno/Sno 2 Amorphous Oxide Semiconductor Quantum Dot Film Square Pattern Current Noise Blue Light-Emitting Diodes Electrical And Mechanical Properties High Deposition Rate Low Drain Voltage Optimization Methods Protective Layer Ti Doping Stability And Performance Negative Bias Oxygen Vacancy Water Vapor Structural And Electrical Properties Ag Thin Film Output Characteristics Cu Concentration Contact Noise Layered Oxide New Type Chemical Strengthening Cooling Water Co-Planar Igzo Target P-N Junction Process Zone Time Dependence Amorphous-Like Improved Stability Loading Effect Ultra-Thin Si-Based Short-Range Ordering Amorphous Silicon Battery Voltage Ito Target Mass Production Artificial Skin Ag-Doped Co-Sputtering Method Oxygen Plasma Photo Resist Conductive Oxide Efficiency Droop Electronic Circuit High Mobility Transistor Interfacial Trap Organic Light-Emitting Devices Power Spectra Density Power Spectral Density(PSD) Touch Sensitivity Matching Layer Amorphous Ingazno Thin Film All-In-One Direct Current(DC) Oxygen Binding Carrier Density Spectroscopy Analysis Channel Noise Reduction Of Oxygen Trade-Off Visible Light Illumination Vth Shift Tft Technology In-Situ Crystallization Model-Based Petri Net(PN) Touch Performance Trapping Behavior Copper Material Mechanical Durability Metal Grids Azo Thin Films Composition Ratio Flexible Substrate Negative Shift Run-Out Electronic Materials O Atoms White Led Display Panel Plasma-Enhanced Chemical Vapor Deposition(PECVD) Trapped Electron(TE) Reactive Rf Magnetron Sputter Semiconductor Films Carbon Nano-Tube(CNT)