Subjects :
Emission model
논문 검색결과
| Type |
Year |
Title |
Cited |
Download |
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Journal
|
2018 |
Gate Tunable Self-Biased Diode Based on Few Layered MoS2 and WSe2
무하마드 칸 Chemistry of Materials, v.30, no.3, pp.1011-1016 |
24 |
원문
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Journal
|
2011 |
Electrical Characterization of n/p-Type Nickel Silicide/Silicon Junctions by Sb Segregation
Jun Myungsim Journal of Nanoscience and Nanotechnology, v.11, no.8, pp.7339-7342 |
0 |
원문
|
|
Journal
|
2008 |
Schottky Barrier Heights of n/p-type Erbium-silicided Schottky Diodes
Jun Myung Sim Microelectronic Engineering, v.85, no.5-6, pp.1395-1398 |
5 |
원문
|
|
Journal
|
2008 |
Analysis of Temperature-dependent Barrier Heights in Erbium-silicided Schottky Diodes
Jun Myung Sim Journal of Vacuum Science and Technology B, v.26, no.1, pp.137-140 |
8 |
원문
|
|
Journal
|
2002 |
Analysis of Schottky Barrier Height in Small Contacts Using a Thermionic-Field Emission Model
Jang Moon Gyu ETRI Journal, v.24, no.6, pp.455-461 |
40 |
|
특허 검색결과
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Family Pat. |
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연구보고서 검색결과
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