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Journal
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2021 |
16-channel Tunable and 25-Gb/s EAM-integrated DBR-LD for WDM-based Mobile Front-haul Networks
Kwon Oh Kee Optics Express, v.29, no.2, pp.1805-1812 |
10 |
원문
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Journal
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2020 |
Recess-Etched and Tetramethylammonium Hydroxide-Treated Nanoscale Pattern on AlGaN/GaN High-Electron-Mobility-Transistors for Improved Ohmic Contact
Jung Hyunwook Journal of the Korean Physical Society, v.76, no.9, pp.837-842 |
0 |
원문
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Journal
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2020 |
Recess-Etched and Tetramethylammonium Hydroxide-Treated Nanoscale Pattern on AlGaN/GaN High-Electron-Mobility-Transistors for Improved Ohmic Contact
도재원 Journal of the Korean Physical Society, v.76, no.9, pp.837-842 |
0 |
원문
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Conference
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2016 |
Characteristic of Schottky Barrier Diode on AlGaN/GaN using Mo-based Ohmic Contact
Kim Zin-Sig 대한전자공학회 종합 학술 대회 (하계) 2016, pp.400-403 |
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Journal
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2006 |
Fabrication of Reliable Self-Aligned InP/InGaAs/InP Double Heterojunction Bipolar Transistor with Hexagonal Emitter Mesa Structure
Min Byoung-Gue Journal of the Korean Physical Society, v.49, no.3, pp.S780-S783 |
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