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Conference
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2025 |
EAM-integrated DBR-LD Using Self-Aligned Metal Contact Method
Kang Taein International Conference on Information and Communication Technology Convergence (ICTC) 2025, pp.733-736 |
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Journal
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2017 |
Characterization of 0.18-μm Gate Length AlGaN/GaN HEMTs on SiC Fabricated Using Two-Step Gate Recessing
Hyung Sup Yoon Journal of the Korean Physical Society, v.71, no.6, pp.360-364 |
2 |
원문
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Journal
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2017 |
Thickness-dependent Schottky Barrier Height of MoS2 Field-effect Transistors
김준영 Nanoscale, v.9, no.18, pp.6151-6157 |
132 |
원문
|
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Conference
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2014 |
Characteristics of AlGaN/GaN HEMTs on SiC with Pt-based Schottky Contacts
Hyung Sup Yoon 한국 반도체 학술 대회 (KCS) 2014, pp.1-1 |
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Journal
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2006 |
Ni/Au Contact to Silicon Quantum Dot Light-Emitting Diodes for the Enhancement of Carrier Injection and Light Extraction Efficiency
김백현 Applied Physics Letters, v.89, no.6, pp.1-3 |
41 |
원문
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