Subjects :
Etch mechanism
논문 검색결과
| Type |
Year |
Title |
Cited |
Download |
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Journal
|
2013 |
Dry Etching Characteristics of Indium Zinc Oxide Thin Films in Adaptive Coupled Plasma
Woo Jong Chang Transactions on Electrical and Electronic Materials, v.14, no.4, pp.216-220 |
1 |
원문
|
|
Journal
|
2011 |
Dry Etching of TiN in N2/Cl2/Ar Adaptively Coupled Plasma
Kim Dong -Pyo Vacuum, v.86, no.4, pp.380-385 |
5 |
원문
|
|
Journal
|
2010 |
Effect of Gas Mixing Ratio on Etch Behavior of Y2O3 Thin Films in Cl2/Ar and BCl3/Ar Inductively Coupled Plasmas
김문근 Japanese Journal of Applied Physics, v.49, no.8 PART 2, pp.1-6 |
5 |
원문
|
|
Journal
|
2009 |
Etching Characteristics of VO2 Thin Films Using Inductively Coupled Cl2/Ar Plasma
한용현 Japanese Journal of Applied Physics, v.48, no.8, pp.08HD041-08HD045 |
8 |
원문
|
|
Journal
|
2008 |
Model-Based Analysis of the ZrO2 Etching Mechanism in Inductively Coupled BCl3/Ar and BCl3/CHF3/Ar Plasmas
김만수 ETRI Journal, v.30, no.3, pp.383-393 |
10 |
원문
|
|
Journal
|
2008 |
Effect of gas mixing ratio on etch behavior of ZrO2 thin films in BCl3∕He inductively coupled plasma
김만수 Journal of Vacuum Science and Technology A, v.26, no.3, pp.344-351 |
14 |
원문
|
특허 검색결과
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연구보고서 검색결과
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