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Journal
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2019 |
GaN MIS-HEMT PA MMICs for 5G Mobile Devices
Kim Seong-Il Journal of the Korean Physical Society, v.74, no.2, pp.196-200 |
5 |
원문
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Journal
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2017 |
Hydrazine (N2H4)-Based Surface Treatment for Interface Quality Improvement in Al2O3/AlGaN/GaN MIS-HEMT
Jung Hyunwook ECS Journal of Solid State Science and Technology, v.6, no.4, pp.184-186 |
1 |
원문
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Conference
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2015 |
Novel Device Structure of Large Periphery AlGaN/GaN MIS-HEMT for Current Density Improvement
Park Young Rak International Conference on Nitride Semiconductors (ICNS) 2015, pp.1-2 |
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Journal
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2015 |
Normally-off GaN MIS-HEMT Using a Combination of Recessed-Gate Structure and CF4 Plasma Treatment
Park Young Rak Physica Status Solidi (A), v.2112, no.5, pp.1170-1173 |
11 |
원문
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Conference
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2014 |
Normally-off GaN MIS-HEMT Using CF4 Plasma Gate Recess
Park Young Rak International Workshop on Nitride Semiconductors (IWN) 2014, pp.1-2 |
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