Subjects :
Interface trap density (Nit)
논문 검색결과
| Type |
Year |
Title |
Cited |
Download |
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Journal
|
2017 |
A Study on N2O Direct Oxidation Process with Re-oxidation Annealing for the Improvement of Interface Properties in 4H-SiC MOS Capacitor
Doohyung Cho Journal of the Korean Physical Society, v.71, no.3, pp.150-155 |
5 |
원문
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Journal
|
2013 |
Capacitance–voltage characterization of surface-treated Al2O3/GaN metal–oxide–semiconductor structures
Bae Sung-Bum Microelectronic Engineering, v.109, pp.10-12 |
6 |
원문
|
|
Journal
|
2007 |
Electrical and Structural Properties of High-k Er-silicate Gate Dielectric Formed by Interfacial Reaction between Er and SiO2 Films
Choi Chel-Jong Applied Physics Letters, v.91, no.1, pp.1-3 |
17 |
원문
|
|
Conference
|
2006 |
Effects of the Resistivity and Crystal Orientation of the Silicon PIN Detector on the Dark Current and Radiation Response Characteristics
Park Kun Sik IEEE Nuclear Science Symposium Conference Record 2006, pp.1068-1072 |
3 |
원문
|
|
Journal
|
2006 |
N2-Annealing Effects on Characteristics of Schottky-Barrier MOSFETS
Jang Moon Gyu IEEE Transactions on Electron Devices, v.53, no.8, pp.1821-1825 |
28 |
원문
|
|
Journal
|
2006 |
Effects of High-Pressure Hydrogen Postannealing on the Electrical and Structural Properties of the Pt-Er Alloy Metal Gate on HfO2 Film
Choi Chel-Jong Electrochemical and Solid-State Letters, v.9, no.7, pp.G228-G230 |
1 |
원문
|
특허 검색결과
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Family Pat. |
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연구보고서 검색결과
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