Subject

Subjects : ferroelectric polymer (PVDF)

  • Articles (9)
  • Patents (0)
  • R&D Reports (0)
논문 검색결과
Type Year Title Cited Download
Journal 2015 Flexible Nonvolatile Memory Transistors using Indium Gallium Zinc Oxide-channel and Ferroelectric Polymer Poly(Vinylidene Fluoride-co-Trifluoroethylene) Fabricated on Elastomer Substrate   Soon-Won Jung  Journal of Vacuum Science and Technology B, v.33, no.5, pp.1-4 18 원문
Conference 2015 Flexible Nonvolatile Memory Transistors Using IGZO-Channel and Organic Ferroelectric Polymer P(VDF-TrFE) Fabricated on Elastomer Substrate   Soon-Won Jung  European Materials Research Society (E-MRS) Meeting 2015 (Spring), pp.1-1
Conference 2012 Ferroelectric Polymer Transistor via Reverse Offset Printing     International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE) 2012, pp.1-1
Conference 2012 Low-Voltage-Operated Ferroelectric Polymer Transistor via Inkjet Printing     Annual Meeting of the International Society of Electrochemistry (ISE) 2012
Conference 2012 Solution Processable Ferroelectric Polymer Transistor     International Conference on Solid Films and Surfaces (ICSFS) 2012, pp.1-1
Journal 2010 Low-Voltage-Operated Top-Gate Polymer Thin-Film Transistors with high Capacitance Poly(Vinylidene Fluoride-Trifluoroethylene)/Poly(Methyl Methacrylate) Dielectrics   Soon-Won Jung  Journal of Applied Physics, v.108, no.10 45 원문
Journal 2010 Characterization of Nonvolatile Memory Behaviors of Al/Poly(vinylidene fluoride-trifluoroethylene)/Al2O3/ZnO Thin-Film Transistors   Yoon Sung Min  Japanese Journal of Applied Physics, v.49, no.4 PART 2, pp.1-6 20 원문
Journal 2010 Top-Gate Ferroelectric Thin-Film-Transistors with P(VDF-TrFE) Copolymer   Soon-Won Jung  Current Applied Physics, v.10, no.1 SUPPL., pp.e58-e61 31 원문
Journal 2009 Effects of ZnO Channel Thickness on the Device Behaviour of Nonvoltile Memory Thin Film Transistor with Double-layered Gate Insulators of Al2O3 and Ferroelectric Polymer   Yoon Sung Min  Journal of Physics D : Applied Physics, v.42, no.24, pp.1-6 32 원문
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