Subjects :
interface quality
논문 검색결과
| Type |
Year |
Title |
Cited |
Download |
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Journal
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2017 |
Hydrazine (N2H4)-Based Surface Treatment for Interface Quality Improvement in Al2O3/AlGaN/GaN MIS-HEMT
Jung Hyunwook ECS Journal of Solid State Science and Technology, v.6, no.4, pp.184-186 |
1 |
원문
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Journal
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2012 |
Influence of Growth Temperature of Transparent Conducting Oxide Layer on Cu(In,Ga)Se2 Thin-Film Solar Cells
Cho Daehyung Thin Solid Films, v.520, no.6, pp.2115-2118 |
34 |
원문
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|
Journal
|
2008 |
Improvement in the optical and structural properties of InGaN/GaN multiple quantum wells by indium predeposition
박진섭 Journal of Physics D : Applied Physics, v.41, no.16, pp.1-4 |
4 |
원문
|
|
Journal
|
2007 |
Electrical and Structural Properties of High-k Er-silicate Gate Dielectric Formed by Interfacial Reaction between Er and SiO2 Films
Choi Chel-Jong Applied Physics Letters, v.91, no.1, pp.1-3 |
17 |
원문
|
|
Journal
|
2006 |
Effects of High-Pressure Hydrogen Postannealing on the Electrical and Structural Properties of the Pt-Er Alloy Metal Gate on HfO2 Film
Choi Chel-Jong Electrochemical and Solid-State Letters, v.9, no.7, pp.G228-G230 |
1 |
원문
|
특허 검색결과
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연구보고서 검색결과
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