Subjects : GaN HEMT devices
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
| Conference | 2024 | A Ku-Band Low-Noise Amplifier MMIC Using 0.15-µm GaN HEMT Technology Woojin Chang International Symposium on Antennas and Propagation (ISAP) 2024, pp.1-2 | 0 | 원문 |
| Conference | 2018 | E-mode GaN HEMT Devices and PA MMICs for 5G Mobile Handsets Kim Seong-Il International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2018, pp.255-255 | ||
| Journal | 2017 | Characterization of 0.18-μm Gate Length AlGaN/GaN HEMTs on SiC Fabricated Using Two-Step Gate Recessing Hyung Sup Yoon Journal of the Korean Physical Society, v.71, no.6, pp.360-364 | 2 | 원문 |
| Conference | 2016 | GaN HEMT Modeling for X-band Applications Kim Seong-Il 대한전자공학회 종합 학술 대회 (하계) 2016, pp.2557-2560 | ||
| Journal | 2015 | DC and RF Characteristics of AlGaN/GaN HEMTs on SiC with Gate Recessed by Using ICP Etching of BCl3/Cl2 Hyung Sup Yoon Journal of the Korean Physical Society, v.67, no.4, pp.654-657 | 3 | 원문 |
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