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Journal
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2013 |
Nonvolatile Ferroelectric P(VDF-TrFE) Memory Transistors Based on Inkjet-Printed Organic Semiconductor
Soon-Won Jung ETRI Journal, v.35, no.4, pp.734-737 |
18 |
원문
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Journal
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2013 |
Transparent Non-Volatile Memory Device Using Silicon Quantum Dots
Rae-Man Park Electronic Materials Letters, v.9, no.4, pp.467-469 |
6 |
원문
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Journal
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2012 |
Subthreshold Characteristics of Pentacene Field-Effect Transistors Influenced by Grain Boundaries
Park Jae Hoon Journal of Applied Physics, v.111, no.10, pp.1-6 |
13 |
원문
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Journal
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2011 |
“See-Through” Nonvolatile Memory Thin-Film Transistors Using a Ferroelectric Copolymer Gate Insulator and an Oxide Semiconductor Channel
Yoon Sung Min Journal of the Korean Physical Society, v.58, no.5, pp.1494-1499 |
2 |
원문
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Journal
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2010 |
Fully Transparent Non‐volatile Memory Thin‐Film Transistors Using an Organic Ferroelectric and Oxide Semiconductor Below 200 °C
Yoon Sung Min Advanced Functional Materials, v.20, no.6, pp.921-926 |
110 |
원문
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Journal
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2009 |
Low Voltage Operation of Nonvolatile Ferroelectric Capacitors Using Poly(Vinylidene Fluoride-Trifluoroethylene) Copolymer and Thin Al2O3 Insulating Layer
Soon-Won Jung Electrochemical and Solid-State Letters, v.12, no.9, pp.H325-H328 |
12 |
원문
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