Subjects : electrical performance and stability
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
| Conference | 2012 | Effects of the NH Content of PECVD Grown SiNx Gate Insulator on the Electrical Performance and Stability of Ti, B-doped InZnO Thin Film Transistors MRS Meeting 2012 (Fall), pp.1-1 | ||
| Conference | 2012 | Effects of the rf power of PECVD for gate insulator deposition on the electrical performance and stability of Ti, B-doped InZnO thin film transistors Pacific Rim Meeting on Electrochemical and Solid-State Science (PRiME) 2012, pp.1-1 | ||
| Conference | 2012 | The thermal annealing effects of gate insulator on the electrical performance and stability of Ti, B-doped In-Zn oxide thin film transistors International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE) 2012, pp.1-1 | ||
| Conference | 2012 | Change of electrical performance and stability of Ti, B-doped In-Zn oxide thin film transistors depending on gate insulators International Conference on Microelectronics and Plasma Technology (ICMAP) 2012, pp.1-1 |
| Status | Year | Patent Name | Country | Family Pat. | KIPRIS |
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| Type | Year | Research Project | Primary Investigator | Download |
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