Subjects :
Contact region
논문 검색결과
| Type |
Year |
Title |
Cited |
Download |
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Journal
|
2018 |
Effect of Post-Annealing on Low-Temperature Solution-Processed High-Performance Indium Oxide Thin Film Transistors
Yeonwha Oh Science of Advanced Materials, v.10, no.4, pp.518-521 |
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원문
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Journal
|
2017 |
Characterization of 0.18-μm Gate Length AlGaN/GaN HEMTs on SiC Fabricated Using Two-Step Gate Recessing
Hyung Sup Yoon Journal of the Korean Physical Society, v.71, no.6, pp.360-364 |
2 |
원문
|
|
Journal
|
2007 |
Enhanced Performance of Si Nanocrystal LEDs by Using Ni∕Ag/Indium Tin Oxide Contact
Huh Chul Electrochemical and Solid-State Letters, v.10, no.1, pp.J9-J11 |
0 |
원문
|
|
Conference
|
2006 |
Atmosphere Pressure Dependent Electrical Properties of the ZnO Nanowire Transistors
Kim Eunkyoung Nanotechnology Materials and Devices Conference (NMDC) 2006, pp.1-2 |
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Journal
|
2003 |
Effects of high-dose BF2+ implantation on the formation of Ti-germanosilicide on polycrystalline Si/Si0.87Ge0.13/Si layers
Park Chan Woo Journal of Vacuum Science and Technology B, v.21, no.5, pp.2193-2197 |
3 |
원문
|
특허 검색결과
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Year |
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Country |
Family Pat. |
KIPRIS |
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연구보고서 검색결과
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Year |
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