Subjects : X-band applications
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
| Journal | 2024 | Effects of parasitic gate capacitance and gate resistance on radiofrequency performance in LG = 0.15 μm GaN highelectron-mobility transistors for X-band applications Sungjae Chang ETRI Journal, v.46, no.6, pp.1090-1102 | 4 | 원문 |
| Conference | 2023 | Impact of Parasitic Gate Capacitance on RF Performance in GaN-based HEMTs for X-band Applications Sungjae Chang The Electrochemical Society (ECS) Meeting 2023, pp.1-1 | ||
| Conference | 2016 | GaN HEMT Modeling for X-band Applications Kim Seong-Il 대한전자공학회 종합 학술 대회 (하계) 2016, pp.2557-2560 | ||
| Conference | 2010 | Device Characteristics of AlGaN/GaN HEMT for S/X-band Applications Woojin Chang 대한전자공학회 종합 학술 대회 (하계) 2010, pp.1984-1987 |
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| Type | Year | Research Project | Primary Investigator | Download |
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