Subjects : Epitaxial structure
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
| Conference | 2024 | 0.15 ㎛ GaN HPA MMIC for 6G Upper-mid Band Junhyung Jeong International Conference on Information and Communication Technology Convergence (ICTC) 2024, pp.1456-1457 | 0 | 원문 |
| Conference | 2024 | 3-dB Bandwidth Enhancement via Mesa-Diameter Reduction in a InGaAs/InP Modified Uni-Travelling Carrier Photodiode Structure Kim Duk Jun International Conference on Information and Communication Technology Convergence (ICTC) 2024, pp.1460-1461 | 1 | 원문 |
| Journal | 2023 | Optimized recess etching criteria for T-gate fabrication achieving ft = 290 GHz at Lg = 124 nm in metamorphic high electron mobility transistor with In0.7Ga0.3As channel Jong Yul Park Electronics Letters, v.59, no.14, pp.1-3 | 2 | 원문 |
| Journal | 2021 | Highly Reliable THz Hermetic Detector based on InGaAs/InP Schottky Barrier Diode Shin Jun-Hwan Infrared Physics and Technology, v.115, pp.1-5 | 7 | 원문 |
| Status | Year | Patent Name | Country | Family Pat. | KIPRIS |
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| Type | Year | Research Project | Primary Investigator | Download |
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