Subjects :
SiC power devices
논문 검색결과
| Type |
Year |
Title |
Cited |
Download |
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Journal
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2026 |
Radiation hardness of 1.2 kV SiC power devices with advanced edge termination structures under proton irradiation
김상엽 Journal of Semiconductors, v.47, no.1, pp.1-7 |
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원문
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Conference
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2025 |
Effects of Proton Irradiation on SiC Power Devices with Various Edge Termination Structures
김상엽 International Symposium on Power Semiconductor Devices and ICs (ISPSD) 2025, pp.565-568 |
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Journal
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2022 |
Thermal shock reliability of micro–nano bimodal Cu–Ag sintered joints
Son Kirak Journal of Materials Science : Materials in Electronics, v.33, pp.17493-17501 |
4 |
원문
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Journal
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2017 |
Epitaxial Junction Termination Extension (Epi-JTE) for SiC Power Devices
Doohyung Cho IEICE Transactions on Electronics, v.E100.C, no.5, pp.439-445 |
0 |
원문
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Conference
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2013 |
Development of the Backside Via Holes Process for SiC Power Device
Sang Choon Ko 한국 반도체 학술 대회 (KCS) 2013, pp.1-2 |
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특허 검색결과
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Family Pat. |
KIPRIS |
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연구보고서 검색결과
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