Subjects : SiC power devices
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
| Journal | 2025 | Radiation hardness of 1.2 kV SiC power devices with advanced edge termination structures under proton irradiation 김상엽 Journal of Semiconductors, v.권호미정, pp.1-7 | 원문 | |
| Conference | 2025 | Effects of Proton Irradiation on SiC Power Devices with Various Edge Termination Structures 김상엽 International Symposium on Power Semiconductor Devices and ICs (ISPSD) 2025, pp.565-568 | ||
| Journal | 2022 | Thermal shock reliability of micro–nano bimodal Cu–Ag sintered joints Son Kirak Journal of Materials Science : Materials in Electronics, v.33, pp.17493-17501 | 2 | 원문 |
| Journal | 2017 | Epitaxial Junction Termination Extension (Epi-JTE) for SiC Power Devices Doohyung Cho IEICE Transactions on Electronics, v.E100.C, no.5, pp.439-445 | 0 | 원문 |
| Conference | 2013 | Development of the Backside Via Holes Process for SiC Power Device Sang Choon Ko 한국 반도체 학술 대회 (KCS) 2013, pp.1-2 |
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| Type | Year | Research Project | Primary Investigator | Download |
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