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Conference
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2012 |
Effects of the NH Content of PECVD Grown SiNx Gate Insulator on the Electrical Performance and Stability of Ti, B-doped InZnO Thin Film Transistors
MRS Meeting 2012 (Fall), pp.1-1 |
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Conference
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2012 |
Effects of the rf power of PECVD for gate insulator deposition on the electrical performance and stability of Ti, B-doped InZnO thin film transistors
Pacific Rim Meeting on Electrochemical and Solid-State Science (PRiME) 2012, pp.1-1 |
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Conference
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2012 |
The thermal annealing effects of gate insulator on the electrical performance and stability of Ti, B-doped In-Zn oxide thin film transistors
International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE) 2012, pp.1-1 |
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Conference
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2012 |
Change of electrical performance and stability of Ti, B-doped In-Zn oxide thin film transistors depending on gate insulators
International Conference on Microelectronics and Plasma Technology (ICMAP) 2012, pp.1-1 |
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