Subjects :
Polycrystalline silicon thin-film transistor
논문 검색결과
| Type |
Year |
Title |
Cited |
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Journal
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2009 |
Fabrication of n-type Schottky barrier thin-film transistor with channel length and width of 0.1 μm and erbium silicide source/drain
Yang Jong-Heon Thin Solid Films, v.517, no.5, pp.1825-1828 |
5 |
원문
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Journal
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2006 |
Oxide-Silicon-Oxide Buffer Structure for Ultralow Temperature Polycrystalline Silicon Thin-Film Transistor on Plastic Substrate
Kim Yong Hae IEEE Electron Device Letters, v.27, no.7, pp.579-581 |
22 |
원문
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Journal
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2006 |
Plasma-free hydrogenation of ultralow-temperature polycrystalline silicon thin-film transistors with SiNx:H as interlayer dielectric
Choong-Heui Chung Applied Physics Letters, v.88, no.7, pp.1-15 |
6 |
원문
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Journal
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2004 |
고성능 저온 폴리실리콘 소자 특성
Kim Yong Hae IEEE Electron Device Letters, v.25, no.8, pp.550-552 |
27 |
원문
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특허 검색결과
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연구보고서 검색결과
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