Registered
반도체 분리/전사 기술을 활용한 수직형 PiN Diode 소자 구조 및 제조방법
- Inventors
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- Application No.
- 2025-0191624 (2025.12.05)
- Registration No.
- 3024065 (2026.11.05)
- Country
- KOREA
- Project Code
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25PH1600, Development of GaN membrane material based on remote-epitaxy and advanced power semiconductor technology(SWaP-C),
Bae Sung-Bum
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25IV1200, UNI-CORE,
Shin Jung Hyuk
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25PH1300, Development of implementation technology for core devices based on Si-GaN hybrid semiconductor,
Hyung Seok Lee
- KSP Keywords
- Device structure, Fabrication method, PIN Diode, vertical pin
- Family
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