19ZB1600, Development of extremely high RF multi-purpose device using boron nitride release layer and device transfer technique,
Sungjae Chang
Abstract
Ⅳ. 연구결과 본 연구과제의 주요 연구결과는 다음과 같다. 1. 질화갈륨 기반 고출력-고주파 소자 제작에 필요한 요소 기술 개발 - 고주파용 질화갈륨 기반 에피 성장 기술 개발 - 질화갈륨 기반 고주파 소자 분리 기술 개발 - 고방열 기판과 질화갈륨 기반 고주파 소자 접합 기술 개발 2. 질화갈륨 기반 고주파 소자 설계 및 제작 기술 개발 3. 고방열 기판상에서 동작하는 질화갈륨 기반 고출력-고주파 소자 제작 기술 개발 4. 고방열 기판상에서 동작하는 질화갈륨 기반 고출력-고주파 소자 특성 분석
(출처 : 요약문 9p)
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