18ZB1600, Development of extremely high RF multi-purpose device using boron nitride release layer and device transfer technique,
Sungjae Chang
Abstract
<연구내용 및 범위> - 고방열 기판상에서 동작하는 질화갈륨 기반 다목적 고출력-고주파 소자 제작에 필요한 요소 기술 개발. - 고방열 기판상에서 동작하는 질화갈륨 기반 다목적 고출력-고주파 소자 제작 기술 개발. - 고방열 기판상에서 동작하는 질화갈륨 기반 다목적 고출력-고주파 소자 특성 분석.
<연구결과> - 고주파용 질화갈륨 에피 성장 기술 개발 - 질화갈륨 기반 고주파 소자 분리 기술 개발 - 고방열 기판과 질화갈륨 기반 고주파 소자 접합 기술 개발
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