질화갈륨, 수직형 소자, 전력 반도체, 에피 성장, 와이드밴드갭, Vertical device, Power device, Epitaxial Growth, WBG
KSP Keywords
Epitaxial growth, GaN power device, Power device, Vertical GaN
Funding Org.
산업통상자원부
Research Org.
한국전자통신연구원
Project Code
22PB4600, Epitaxial growth and Device Technology Development for 2kV vertical GaN Power device,
Hyung Seok Lee
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