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Gan-Based Proton Irradiation Drain Current Cut-Off Frequency Algan/Gan Hemts Head Size T-Gate Gate Capacitance Carrier Mobility Gate Insulator High Electron Mobility Transistor(HEMT) X-Band Applications Threshold Voltage Shift Sapphire Substrates Stress Measurement Vt Shift Device Degradation Degradation Mechanism Electrical Properties(I-V curve) Gan Films Linear Energy Transfer Critical Defects Satellite Communication System Gate Bias Stress Property Improvement Radiation Resistance Time Exponent Energy Barrier 5 Nm Off-State Rf Properties Rf Application Total Ionizing Dose T-Shaped Gate And Gate Equivalent Circuit Model(ECM) Energy Levels Hydrogen Silsesquioxane Metal-Insulator-Semiconductor(MIS) Mobility Degradation Trap Sites Device Performance Gate Voltage Interface Trap Performance Degradation Radiation Tolerance Recess Gate Rf Performance Systematic Study Ac Stress 60 Ghz Maximum Oscillation Frequency Sheet Resistance Access Region Displacement Damage Electrical Characteristics Gate Resistance Hetero-Interface Laser Lift-Off Cu Film Thin Film Resistor Thermal Conductivity Temperature Dependence Various Substrates Actual Operation Aln Substrate Frequency Properties Substrate Effects Self-Heating Effect(SHE)