ETRI-Knowledge Sharing Plaform

Gan-Based Drain Current Device Performance Algan/Gan Hemts W-Band Radiation Hardness Carrier Mobility Metamorphic High Electron Mobility Transistor(mHEMT) Proton Radiation T-Shaped Gate Cut-Off Frequency Gate Insulator Microwave Monolithic Integrated Circuits(MMIC) Microwave Integrated Circuit Gate Recess Ohmic Contact Stress Measurement Two-Step 5 Nm Proton Irradiation Channel Layer 60 Ghz Maximum Oscillation Frequency Metal-Insulator-Semiconductor(MIS) Sapphire Substrates High Performance Gate Bias Stress Trapped Charge Citric Acid Gan Nanowire Sensor Device T-Gate Wet Etching Bi-Layer Device Properties Gas Sensors Low Noise Amplifier(LNA) Output Characteristics Performance Degradation Recess Gate Iii-Nitrides Thin Film Resistor Breakdown Voltage(BDV) Total Ionizing Dose Effects Hetero-Interface Insulating Layer Radar Applications Two-Dimensional Electron Gas(2DEG) Dielectric Layer Dc Output Hexagonal Boron Nitride(h-BN) Threshold Voltage Shift Atomically Thin Vt Shift Trend Of Increasing Electrical Properties(I-V curve) 2d Material Transmission Electron Microscopy(TEM) Target Current Critical Defects Coulomb Scattering Contact Interface Degradation Mechanism Device Degradation Defect Analysis Electrochemical Reaction(ECR) Electrode Process Gate Electrode Gan Films Hysteresis Phenomenon Linear Energy Transfer Molecular Beam Epitaxy(MBE) Measurement Results Mobility Behavior Microelectronic Devices Nanometer-Scale Practical Implementation Satellite Communication System Band 3 Time Exponent Conversion Loss Epitaxial Wafer Electrical Characterization Gan On Sic Initialization Vector(IV) Metal-Oxide-Semiconductor Field-Effect Transistor(MOSFET) Noise Figure(NF) Next-Generation Power Switching Plasma Treatment Property Improvement Radiation Resistance Resistive Mixer Rf Characteristics Radio Frequency (Rf) Performance Single-Ended Device Layout Tetramethylammonium Hydroxide Dc Characteristics Etching Process Fabrication Process Electronic Materials Energy Barrier Etching Rate Fe-Doped Gate Foot Gate Dielectric Gas Reduction Metal Deposition Passivation Layer Rf Application Rf Properties Radio Frequency Applications Scanning Electron Microscopy(S.E.M.) Subthreshold Slope(SS) Single Crystal State-Of-The-Art And Gate Three-Layered Van Der Waals Heterostructure 110 Ghz Wafer-Scale Theoretical Calculation Trap Sites Compressive Stress Contact Area Current-Voltage Measurements Device Fabrication Dot Pattern Direct Contact Etching Conditions Electron Trapping Equivalent Circuit Model(ECM) Electronics And Optoelectronics Energy Levels Etching Solution Gan Hemt Technology Hydrogen Silsesquioxane I-V Measurement Ku-Band Image Rejection Mixer Input Signal Mobility Degradation Quaternary Alloy Non-Uniformity Ohmic Metal Pulsed Mode Rf Power Semi-Insulating Single-Layer High-Voltage And High-Power As 2 Van Der Waals Interaction Charging Time Device Characteristics Frequency Range Etch Rates Fluorine Ions Gate Voltage Head Size Key Device Interface Trap Large-Scale Material Properties Oxide-Semiconductor Field-Effect Transistors Radiation Effects Sin Passivation Si-Doped Systematic Study Ac Stress Spurious Suppression Degradation Factor Current Density Conversion Gain Direct Current(DC) Dc Current Electron Beam Lithography Energy Dispersive X-Ray Spectroscopy(EDX) Epitaxial Layer Gate Length Gate Capacitance Mechanical Stress Off-State Breakdown Process Technology Power Amplifiers(PAs) 94 Ghz Sheet Resistance Spectroscopic Analyses Surface Defects Algan/Gan Heterostructure Atomic Force Microcopy Access Region Tensile Stress X-Band Applications Thermal Conductivity Temperature Dependence Cu Film Common-Source Displacement Damage Deterioration Mechanism Electrical Characteristics Field Plate Frequency Multiplier High Output High Power Devices Inalas/Ingaas Mhemt Low Annealing Temperature Laser Lift-Off Linear Trend Ohmic Electrode Off-Chip Power Amplifier Mmic Power Losses Recess Depth Switching Device Si-Based Aln Substrate Actual Operation Various Substrates X-Ray Topography Manufacturing Processes 28 Ghz Technology Trends Channel Current Charging Effects Drain Voltage Dangling Bonds Electron Beam Exposure Enhancement-Mode Frequency Properties Electrochemical Potential Lithography Process Improved Performance Measuring Channel Metalorganic Chemical Vapor Deposition Nicr Thin Film Ohmic Behavior Performance And Reliability Performance Deterioration Recess Etch Substrate Effects Self-Heating Effect(SHE)