ETRI-Knowledge Sharing Plaform

High Electron Mobility Transistor(HEMT) Gan-Based 94 Ghz Algan/Gan Hemts Components Technology Sige Hbt Compound Semiconductor Down-Conversion Mixer Breakdown Voltage(BDV) Field Plate Lc Voltage Controlled Oscillator(LC-VCO) 6 Ghz Fabrication Process Metal-Insulator-Semiconductor(MIS) Mim Capacitor Sige Bicmos Technology Conversion Gain Silicon-Germanium(SiGe) 5 Nm T-Shaped Gate Frequency Synthesizer 5.8 Ghz Low Noise Amplifier(LNA) Device Performance Optical Communications Matching Circuit Single-Chip Electrical Properties(I-V curve) On-Chip Rf Isolation Next-Generation Noise Figure(NF) Up-Conversion Mixer Threshold Voltage Shift Small Signal Gain Back Barrier Gate Dielectric Off-State Leakage National Defense Smart Lighting Sensor Node Active Balun Platform Development Frequency Range Light Sources Microwave Integrated Circuit Microwave Monolithic Integrated Circuits(MMIC) Gate Length Heterojunction Bipolar Transistors(HBTs) Gate Resistance Low Phase Noise Nitride Layer Algan/Gan Heterostructure Sige Film Thin Film Resistor Sic Substrate Gate Insulator Carrier Mobility Proton Irradiation Silicon Nitride Cross-Coupled Pair Dielectric Layer 2.4 Ghz Radiation Hardness Supply Voltage Two-Dimensional Electron Gas(2DEG) Enhancement-Mode Total Ionizing Dose Effects X-Band Applications Dual-Channel Spiral Inductor P-Type Phase Locked Loop(PLL) Fully Integrated Schottky Barrier Diode(SBD) Self-Heating Effect(SHE) Stress Measurement Semiconductor Technology 30 Ghz Dry Etching Power Hemt XG-PON1 Noise Level Epitaxial Layers High Performance S-Band Threading Dislocations(TDs) Proton Radiation 10 Ghz Gate Leakage Current Lc Tank Etching Process Drain Current Plate Structure Cmos Process Technology Dc Characteristics And Gate Reset Current Equivalent Circuit Model(ECM) Sige Alloy Input And Output Via-Hole Head Size Power Characteristics High Temperature Channel Layer Device Properties Fully Differential Wide Tuning Range Complementary Metal-Oxide-Semiconductor(CMOS) Strained-Si T-Gate Structure-Related Silicon Substrate Thermal Behavior Gate Capacitance Power Amplifiers(PAs) Memory Device Bottom Electrode Passivation Thickness Atomic Composition Frequency-Modulation(FM) Contact Size W-Band Concurrent Dual-Band Linear Energy Transfer Mixed-Mode Stress True-Time Delay Millimetre-Wave Measurement Results Bias Current High Gain Mobility Behavior Third-Order Intercept Point Cross-Coupled Lc Vco Heterostructure Field Effect Transistors Temperature And Pressure Device Degradation Optical Receiver Gain Flatness Dc Power Threading Dislocation Density MOS-HEMT Square Wave Gigabit-Capable Passive Optical Network Growth Pressure 70 Ghz Oxidation Of Silicon Resonance Frequency Satellite Communication System Hysteresis Phenomenon Degradation Mechanism Parasitic Capacitance In-Situ Annealing Phase Change Material(PCM) Wafer Level Packaging Switching Speed Novel Method Capacitive Coupling Petri Net(PN) Parasitic Components Power Consumption Uwb System Data Stream Uwb Applications Four-Band Electrical Resistivity High Figure Of Merit Treatment Process Medium Power Amplifier Trapping Effects Bias Point 130-Nm Sige Bicmos Reflection Coefficient Radio Frequency (Rf) Performance Optimum Thickness Asynchronous Processor Two-Stage Gate Width Loop Bandwidth Multi-Mode High Sensitivity Gate Bias Stress Dynamic Performance Recessed Gate Plasma-Enhanced Chemical Vapor Deposition(PECVD) Sige Epitaxial Growth Lattice Temperature Quality-Factor(Q-factor) Silicon Heterojunction Bias Circuit Local Oscillator Atomic Layer Deposition Radiation Resistance 60 Ghz Band 250 Mhz Non-Volatile Memory(NVM) Parallel-Plate Chirp Modulation Driver Amplifier Data Rate Semiconductor Heterostructure Radio Link Ultra-Wideband System Cross-Coupled Differential Vco Depletion Mode Structure Optimization Silicon Carbide(3C-SiC) Reduced Pressure Chemical Vapor Deposition High Signal Oxidation Process Inductively-Coupled Plasma(ICP) Higher Frequency Gas Channel Buffer Structure Open Stub Frequency Source Lumped Elements Flicker Noise(1/f) Nano-Device Gas Reduction Trapped Charge Gate Foot Cost-Effective Electron Confinement Etching Technique 2-D Electron Gas Thermal Stability(TGA) Situ Doping Polished Si Applied Physics High-Resolution Layer Composition Microstrip Line Top Electrode Phase Noise Reduction Passivation Layer Subthreshold Slope(SS) Scanning Electron Microscopy(S.E.M.) Carrier Frequency Power Combiner Simplified Circuit Model Differential Current Emitter Layer Telecommunication System Lattice Constants 6 Mhz Frequency Error(FE) Bottom Plate Local Oxidation Ultralow Power(ULP) 200 Ghz On/Off Current Ratio Gan Hemt Technology Carrier Concentration Rf Power Output Matching Lattice Matched Current-Voltage Measurements Etching Conditions Resistance Change Electron Trapping Total Current Cut-Off Frequency Signal Power Reference Frequency Chemical Mechanical Polishing(CMP) Si Wafer Compressive Stress Intelligent Greenhouse LOW POWER AND HIGH SPEED Communication Applications Structure Analysis Plasma Process Silicon-Based Thin Films Barrier Layers Gan Power Amplifier I-V Measurement Surface Roughness Active Element Double-Balanced Mixer Heating Layers Technical Development 7 Mm Ion Implantation Frequency Modulated Continuous Wave (Fmcw) Radar Multi-Band Sin Passivation New Method Device Applications Divide-By-2 Charging Time Low Sheet Resistance Growth Temperature Fast Settling Operating Frequency Burst Detection Capacitor Array Fluorine Ions Millimeter-Wave Applications F Max Low-Power Cmos Radiation Tolerance Negative Feedback Normally-Off Recess Gate Oscillation Amplitude High Resistivity Parameter Extraction Lossy Transmission Line High Speed Communication Carbon-Doped Device Characteristics Phase Transition Base Layer Cascode Mixer Radiation Effects Quantum Channel Current Consumption Radar System Phase Compensation Performance Degradation Ic Reliability Optimum Length Autonomous Driving Si Layer Wide Dynamic Range(WDR) Intermediate Frequency N-Type Si Frequency Hopping Physical Model Wireless Personal Area Network(WPAN) Common-Mode(CM) Maximum Oscillation Frequency Ammonium Hydroxide Gan-On-Sic Hemt Wideband Operation Doped Silicon Frequency Variation Gaas Phemt Device Size Reference Device 18 Ghz P-N Heterojunction Highly Doped Burst-Mode Receivers(Rx's) Mechanical Stress On-Board Equipment Sige Source Chalcogenide Alloys Dc Current Integer-N Current Density Wlan Applications Millimeter-Wave Band Input Matching Direct Current Characteristics Double Plasma C-Doped 60ghz Communication 15 Ghz Si-Based Tensile Stress State Performance Deterioration Mechanism Hetero-Interface Temperature Dependence Pll Synthesizer Reactive Ion Etching(RIE) Cross-Coupled Vco Power Amplifier Mmic Two-Dimensional Simulation Power Conversion Low Frequency Noise Proximity Sensor Decoupling Capacitor Bit-Error-Rate(BER) Thermal Noise Resistance Variation Current-Steering High Power Devices Displacement Damage Key Role Fan-Out Current Collapse Saturated Output Power High-Frequency Applications Frequency Properties Sige Virtual Substrates Competitive Power High Power Density Wideband Matching Control Device Sige Device Trans Conductance Rf Transmitter Fluoride-Based Plasma Treatment Thermal Effects Charging Effects Intelligent Vehicle Second Metal Joule Heating Interface Circuit 2.3 Ghz Control Range Front-Side Gan Heterostructures Simulation Results Radio Frequency Characteristics Gan Buffer Layer Drain Voltage Sige Bicmos Process Performance Deterioration Growth Conditions Thermoelectric Device Temperature Effect Layer Growth Strain Relief Misfit Dislocation Relaxed Sige Loop-Filter(LF) Pulse Width Tmah Etching Transistor Devices Current-Voltage Characteristics Microwave Characteristics High Resistance Cycling Endurance Surface Treatments Frequency Band Air-Bridge