MOSFET, Metal Oxide Semiconductor Field Effect Transistor
KSP Keywords
Nano-device, Quantum channel
Funding Org.
한국전자통신연구원
Research Org.
한국전자통신연구원
Project Code
08ZB1300, SiGe-Based Quantum Channel Nano-Device Technology,
Lee Sang-Heung
Abstract
본 연구실이 확보하고 있는 SiGe 반도체 기술 resource 로 나노 신소자의 기반기술을 개발하여 향후 부딪히게 될 특허분쟁, 기술료 등의 문제를 공략하기 위해 원천기술의 발굴 및 특허확보, 국내의 학계와 산업체와 긴밀한 협조에 의한 연구 저변확대, 독창적 아이디어의 발굴, 실용화 체계강화에 역점을 두어 추진한다. 연구내용 및 범위는 다음과 같다.
■ 고농도 SiGe/Si 에피 및 버퍼 성장기술(Xge=0.5) 개발 ■ 고이동도 SiGe SFET 소자특성 최적화 연구 ■ Radical-Assisted OxyNitridation (RAON)을 이용한 SiON (SiON/SiO2 구조) 게이트 절연막 형성 기술 개발 ■ High-K 를 이용한 게이트 절연막 형성기술 개발 ■ 고이동도 SiGe SFET 소자 특성 최적화 연구 ■ 고이동도 SiGe SFET 제조기술 개발 ■ SiGe SFET 공정기술 집적화 연구 - 실기콘 기판상의 저온/고농도 SiGe 양자채널 에피성장 기술 - 실기콘 기판상의 고온/고농도 SiGe 양자채널 에피성장 기술 - SiGe SFET 채널구조 및 공정기술 최적화 - SiGe SFET 공정기술 집적화
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