ETRI-Knowledge Sharing Plaform

Gan-Based Device Performance Algan/Gan Hemts Gate Recess Carrier Mobility Radiation Hardness W-Band Metamorphic High Electron Mobility Transistor(mHEMT) Channel Thickness Sapphire Substrates Gate Dielectric T-Shaped Gate Cut-Off Frequency And Gate Metal-Insulator-Semiconductor(MIS) Device Properties Microwave Integrated Circuit Microwave Monolithic Integrated Circuits(MMIC) Mechanical Stress Gate Insulator Dielectric Layer Surface Treatments Proton Radiation Ohmic Contact Enhancement-Mode Gate Bias Stress Two-Step 5 Nm Bi-Layer Performance Degradation 60 Ghz Maximum Oscillation Frequency Sheet Resistance Proton Irradiation Total Ionizing Dose Effects Stress Measurement Dc Output Hexagonal Boron Nitride(h-BN) Two-Dimensional Electron Gas(2DEG) Components Technology Electrical Properties(I-V curve) Mobility Behavior Transmission Electron Microscopy(TEM) Channel Mobility Algan/Gan Mis-Hemt Electrical Characterization High Performance Next-Generation Plasma Treatment Recessed Gate Release Layer Rf Characteristics Transfer Characteristics Threshold Voltage Shift Citric Acid Metal Deposition Off-State Passivation Layer Subthreshold Slope(SS) Tetramethylammonium Hydroxide Trapped Charge Compressive Stress Electron Trapping Multi-Purpose Channel Layer Head Size Low Noise Amplifier(LNA) Wet Etching Output Characteristics Recess Gate T-Gate Transfer Technique Charge Trapping Atomic Force Microscope(AFM) Compound Semiconductor Gate Capacitance Algan/Gan Heterostructure Access Region Hetero-Interface Insulating Layer X-Band Applications Sic Device Tensile Stress Target Current Vt Shift Contact Resistance(73.40.Cg) Contact Interface Coulomb Scattering Device Degradation Degradation Mechanism Electrochemical Reaction(ECR) Electrode Process Hole Trapping Gan Films Gate Electrode Hysteresis Phenomenon Linear Energy Transfer 2d Material Atomically Thin Critical Defects Mobility Extraction Method Metal Oxide Semiconductor Measurement Results Microelectronic Devices Nanometer-Scale O 3 Practical Implementation Radiation-Induced Satellite Communication System I-V Characteristic(Transport property) Transport Characteristics Chemical Deposition Channel Quality Coupling Effects Conversion Loss Carrier Transport Capping Layer Accurate Model Atomic Layer Deposition Dc Measurements Dislocation Density Depletion Mode Epitaxial Layers Epitaxial Wafer Etch Profile Gate Operation Gate Coupling Gan On Sic Gaas Mmic X-Ray Photoelectron Spectroscopy (Xps) Noise Figure(NF) Organic Vapor Plasma-Enhanced Chemical Vapor Deposition(PECVD) Property Improvement Radiation Resistance Resistive Mixer Radio Frequency (Rf) Performance Saturation Current Single-Ended Time Exponent Transistor Characteristics Atomic Force Microscopy (Afm) Double-Gate(DG) Dc Characteristics Device Layout Etching Rate Energy Barrier Etching Process Edge-Type Fabrication Process Gate Leakage Current Gas Reduction Gate Foot Cleaning Process Measurement Data Process Technique Quality Improvement Rf Properties Radio Frequency Applications Rf Application Scanning Electron Microscopy(S.E.M.) Subthreshold Swing(SS) State-Of-The-Art Via-Hole Van Der Waals Heterostructure Contact Area Current-Voltage Measurements Carrier Transfer Carrier Concentration Active Region Dot Pattern Direct Contact Device Fabrication Etching Solution Equivalent Circuit Model(ECM) Electronics And Optoelectronics Energy Levels Etching Conditions Fin Width Gate Control Gan Power Amplifier Hydrogen Silsesquioxane Input Signal I-V Measurement Interface Quality Image Rejection Mixer Wafer-Scale 110 Ghz Mobility Degradation Non-Uniformity On/Off Current Ratio Ohmic Metal Pulsed Mode Quaternary Alloy Surface Treatment Method Single-Layer Saturation Drain Current Theoretical Calculation Trap Sites Three-Layered Van Der Waals Interaction Width Effects Charging Time As 2 Device Characteristics Etch Rates Frequency Range F Max Fluorine Ions Gan Capping Gate Voltage Interface Trap Key Device Large-Scale X-Ray Diffraction (Xrd) Mim Capacitor Native Oxide Layer Normally-Off Radiation Tolerance Radiation Effects Sin Passivation Systematic Study Capacitance-Voltage Current Density Conversion Gain Comparative Study Applied Bias Ac Stress Degradation Factor Different Modes Direct Current(DC) Dc Current Digital Etch Energy Dispersive X-Ray Spectroscopy(EDX) Electron Beam Lithography Gate Length Iii-Nitrides Wideband Operation 94 Ghz Operating Parameters Power Amplifiers(PAs) Plasma Damage Process Technology Spurious Suppression Single-Gate(SG) Spectroscopic Analyses Surface Defects Via Etch Channel Properties Common-Source Atomic Force Microcopy Deterioration Mechanism Displacement Damage Electrical Characteristics Frequency Multiplier Gate Resistance High Output High Power Devices Inalas/Ingaas Mhemt Low Annealing Temperature Laser Lift-Off Cu Film Nitride Layer Ohmic Electrode Off-Chip Power Amplifier Mmic Power Losses Recess Depth Silicon Nitride Sic Substrate Stress Conditions Stress Engineering Stress Effects Si-Based Thin Film Resistor Thermal Conductivity Temperature Dependence Various Substrates Crystalline Quality Channel Current Charging Effects CF 4 Actual Operation Aln Substrate Drain Voltage Defect-Free Dangling Bonds Electrochemical Potential Electron Beam Exposure Frequency Properties Improved Performance 3 V 28 Ghz Xrd Data Lithography Process Measuring Channel Manufacturing Processes Metalorganic Chemical Vapor Deposition Ohmic Behavior Performance And Reliability Performance Deterioration Recess Etch Substrate Effects Self-Heating Effect(SHE)