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Journal
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2013 |
Double-Layered Passivation Film Structure of Al2O3/SiNx for High Mobility Oxide Thin Film Transistors
Park Sang-Hee Journal of Vacuum Science and Technology B, v.31, no.2, pp.1-6 |
31 |
원문
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Conference
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2013 |
Simulation Studies of Triple Gate Trench Power MOSFETs (TGRMOSs) by Using Modified Resurf Stepped Oxide (RSO) Process with Various Gate Configuration and its Bias Condition
Na Kyoung Il 한국 반도체 학술 대회 (KCS) 2013, pp.1-2 |
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Conference
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2012 |
Passivation of High Mobility Oxide TFT
Park Sang-Hee International Meeting on Information Display (IMID) 2012, pp.1-2 |
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Journal
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2011 |
Effects of the Hole Tunneling Barrier Width on the Electrical Characteristic in Silicon Quantum Dots Light-Emitting Diodes
Tae-Youb Kim Japanese Journal of Applied Physics, v.50, no.4 PART 2, pp.1-3 |
4 |
원문
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Conference
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2006 |
Fabrication and Characteristics of 0.12 μm Single and Double-Recessed Gate AlGaAs/InGaAs/GaAs PHEMTs Using a SiNx Pre-Passivation Layer
Jong-Won Lim 한국반도체 학술 대회 (KCS) 2006, pp.1-2 |
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Journal
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2005 |
A Comparative Study of a Dielectric-Defined Process on AlGaAs/InGaAs/GaAs PHEMTs
Jong-Won Lim ETRI Journal, v.27, no.3, pp.304-311 |
8 |
원문
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