Subjects :
Threshold current density
논문 검색결과
| Type |
Year |
Title |
Cited |
Download |
|
Journal
|
2025 |
High Performance 1.3 µm III–V Quantum Dot Lasers Grown on Silicon via all MOCVD Epitaxy
Park Honghwi Laser and Photonics Reviews, v.19, no.19, pp.1-9 |
1 |
원문
|
|
Journal
|
2021 |
Monolithic Growth of GaAs Laser Diodes on Si(001) by Optimal AlAs Nucleation with Thermal Cycle Annealing
Young-Ho Ko Optical Materials Express, v.11, no.3, pp.943-951 |
9 |
원문
|
|
Conference
|
2007 |
Continuous Wave Operation of an Electrically Driven Spiral Microcavity InGaAsP/InP Laser Diodes
Jong-Hoi Kim IEEE Lasers and Electro-Optics Society (LEOS) Meeting 2007, pp.654-655 |
0 |
원문
|
|
Journal
|
2006 |
InAs-InAlGaAs Quantum Dot DFB Lasers Based on InP (001)
Jin Soo Kim IEEE Photonics Technology Letters, v.18, no.4, pp.595-597 |
24 |
원문
|
|
Journal
|
2004 |
Room-temperature operation of InP-based InAs quantum dot laser
Jin Soo Kim IEEE Photonics Technology Letters, v.16, no.7, pp.1607-1609 |
71 |
원문
|
|
Journal
|
2000 |
Pulse operation and threshold characteristics of 1.55-μm InAlGaAs-InAlAs VCSELs
Kwon O-Kyun IEEE Photonics Technology Letters, v.12, no.9, pp.1132-1134 |
8 |
원문
|
특허 검색결과
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연구보고서 검색결과
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