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Journal
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2008 |
Three-Dimensionally Stacked Poly-Si TFT CMOS Inverter with High Quality Laser Crystallized Channel on Si Substrate
Oh Soon-Young Solid-State Electronics, v.52, no.3, pp.372-376 |
8 |
원문
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Journal
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2008 |
A Two-step Annealing Process for Ni Silicide Formation in an Ultra-thin Body RF SOI MOSFET
Chang-Geun Ahn Materials Science and Engineering B, v.147, no.2-3, pp.183-186 |
4 |
원문
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Journal
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2005 |
30-nm recessed S/D SOI MOSFET with an ultrathin body and a low SDE resistance
Chang-Geun Ahn IEEE Electron Device Letters, v.26, no.7, pp.486-488 |
16 |
원문
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Conference
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2004 |
Recessed source-drain (S/D) SOI MOSFETs with low S/D extension (SDE) external resistance
Chang Geun Ahn International SOI Conference 2004, pp.207-208 |
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원문
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Conference
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2003 |
The Electrical Characteristics of Polysilicon Source/Drain SOI MOSFETs with High-K Gate Dielectrics
임기주 대한전자공학회 종합 학술 대회 (하계) 2003, pp.715-718 |
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