|
Journal
|
2024 |
Deep-Submicron Channel Length Oxide Semiconductor Thin-Film Transistors Enabled by Self-Aligned Nanogap Lithography
Sung Chihun IEEE Electron Device Letters, v.45, no.6, pp.1020-1023 |
2 |
원문
|
|
Conference
|
2023 |
Oxide Semiconductor Thin-Film Transistors with Deep Submicron Channel Fabricated with Hyperlithography
Sung Chihun Society for Information Display (SID) International Symposium 2023, pp.692-694 |
0 |
원문
|
|
Journal
|
2015 |
Origin of Degradation Phenomenon under Drain Bias Stress for Oxide Thin Film Transistors using IGZO and IGO Channel Layers
박준용 Scientific Reports, v.5, pp.1-5 |
35 |
원문
|
|
Conference
|
2014 |
Characteristics of AlGaN/GaN HEMTs on SiC with Pt-based Schottky Contacts
Hyung Sup Yoon 한국 반도체 학술 대회 (KCS) 2014, pp.1-1 |
|
|
|
Conference
|
2011 |
Drain Bias Induced Instability Characteristics in Oxide Thin Film Transistors
Yang Shinhyuk International Meeting on Information Display (IMIT) 2011, pp.115-116 |
|
|