Subjects :
Ultra-thin body
논문 검색결과
| Type |
Year |
Title |
Cited |
Download |
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Journal
|
2021 |
In situ implementation of silicon epitaxial layer on amorphous SiO2 using reduced-pressure chemical vapor deposition
Kim Sang Hoon Applied Materials Today, v.24, pp.1-7 |
8 |
원문
|
|
Journal
|
2008 |
A Two-step Annealing Process for Ni Silicide Formation in an Ultra-thin Body RF SOI MOSFET
Chang-Geun Ahn Materials Science and Engineering B, v.147, no.2-3, pp.183-186 |
4 |
원문
|
|
Journal
|
2006 |
Formation of a Self-Aligned Hard Mask using Hydrogen Silsesquioxane
Kiju Im Applied Physics Letters, v.88, no.15, pp.1-3 |
3 |
원문
|
|
Journal
|
2005 |
30-nm recessed S/D SOI MOSFET with an ultrathin body and a low SDE resistance
Chang-Geun Ahn IEEE Electron Device Letters, v.26, no.7, pp.486-488 |
16 |
원문
|
|
Conference
|
2004 |
Recessed source-drain (S/D) SOI MOSFETs with low S/D extension (SDE) external resistance
Chang Geun Ahn International SOI Conference 2004, pp.207-208 |
|
원문
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특허 검색결과
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Family Pat. |
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연구보고서 검색결과
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