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Journal
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2012 |
Etching Characteristics and Mechanisms of TiO2 Thin Films in HBr/Cl 2/Ar Inductively Coupled Plasma
김대희 Japanese Journal of Applied Physics, v.51, no.10, pp.1-5 |
3 |
원문
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Journal
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2012 |
Etching Characteristics and Mechanisms of TiO2 Thin Films in HBr/Ar and Cl2/Ar Inductively-Coupled Plasmas
장한별 Plasma Chemistry and Plasma Processing, v.32, no.2, pp.333-342 |
3 |
원문
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Journal
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2011 |
Dual Etch Processes of Via and Metal Paste Filling for Through Silicon Via Process
함용현 Thin Solid Films, v.519, no.20, pp.6727-6731 |
26 |
원문
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Journal
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2011 |
Etching characteristics and mechanism of Ga-doped ZnO thin films in inductively-coupled HBr/X (X = Ar, He, N2, O2) plasmas
함용현 Vacuum, v.85, no.11, pp.1021-1025 |
10 |
원문
|
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Journal
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2010 |
Etching Characteristics and Mechanism of ZnO and Ga-Doped ZnO Thin Films in Inductively Coupled HBr/Ar/CHF3 Plasma
함용현 Japanese Journal of Applied Physics, v.49, no.8 PART 2, pp.1-5 |
5 |
원문
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Journal
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2009 |
Etching Characteristics of VO2 Thin Films Using Inductively Coupled Cl2/Ar Plasma
한용현 Japanese Journal of Applied Physics, v.48, no.8, pp.08HD041-08HD045 |
8 |
원문
|
|
Journal
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2008 |
Etching Characteristics of Al2O3 Thin Films in Inductively Coupled BCl3/Ar Plasma
Sun Jin Yun Vacuum, v.82, no.11, pp.1198-1202 |
14 |
원문
|
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Journal
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2008 |
Effect of gas mixing ratio on etch behavior of ZrO2 thin films in BCl3∕He inductively coupled plasma
김만수 Journal of Vacuum Science and Technology A, v.26, no.3, pp.344-351 |
14 |
원문
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