Subjects : Power switching
| Type | Year | Title | Cited | Download |
|---|---|---|---|---|
| Journal | 2019 | 2.32 kV Breakdown Voltage Lateral β-Ga2O3 MOSFETs with Source-Connected Field Plate Mun Jae Kyoung ECS Journal of Solid State Science and Technology, v.8, no.7, pp.3079-3082 | 122 | 원문 |
| Conference | 2016 | Characteristic of Schottky Barrier Diode on AlGaN/GaN using Mo-based Ohmic Contact Kim Zin-Sig 대한전자공학회 종합 학술 대회 (하계) 2016, pp.400-403 | ||
| Conference | 2015 | 700 V / 20 A Double AlGaN/GaN Lateral Schottky Barrier Diodes with Recessed Anode Structure on Silicon Substrate 나제호 International Conference on Nitride Semiconductors (ICNS) 2015, pp.1-2 | ||
| Conference | 2014 | Normally-off GaN MIS-HEMT Using CF4 Plasma Gate Recess Park Young Rak International Workshop on Nitride Semiconductors (IWN) 2014, pp.1-2 | ||
| Conference | 2012 | Current Status of GaN Technologies in ETRI Mun Jae Kyoung Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) 2012, pp.1-2 |
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| Type | Year | Research Project | Primary Investigator | Download |
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