Subject

Subjects : off-state leakage

  • Articles (8)
  • Patents (0)
  • R&D Reports (0)
논문 검색결과
Type Year Title Cited Download
Journal 2023 Improvement of Dynamic On-Resistance in GaN-Based Devices with a High-Quality In Situ SiN Passivation Layer   Jeonggil Kim  Micromachines, v.14, no.6, pp.1-10 5 원문
Journal 2023 Improvement of Dynamic On-Resistance in GaN-Based Devices with a High-Quality In Situ SiN Passivation Layer   이준혁  Micromachines, v.14, no.6, pp.1-10 5 원문
Conference 2019 Normally-off Field Effect Transistors using fine controlled Recess under Gate Area on AlGaN/GaN Heterostructures   Kim Zin-Sig  대한전자공학회 학술 대회 (추계) 2019, pp.215-218
Journal 2019 Growth of AlGaN/GaN Heterostructure with Lattice-matched AlIn(Ga)N Back Barrier   김정길  Solid-State Electronics, v.152, pp.24-28 10 원문
Journal 2018 High Figure-of-Merit (V 2 BR /R ON ) AlGaN/GaN Power HEMT With Periodically C-Doped GaN Buffer and AlGaN Back Barrier   이준혁  IEEE Journal of the Electron Devices Society, v.6, pp.1179-1186 41 원문
Journal 2018 Normally-off AlGaN/GaN-based MOS-HEMT with Self-terminating TMAH Wet Recess Etching   손동혁  Solid-State Electronics, v.141, pp.7-12 9 원문
Journal 2018 Normally-off AlGaN/GaN-based MOS-HEMT with Self-terminating TMAH Wet Recess Etching   조영우  Solid-State Electronics, v.141, pp.7-12 9 원문
Journal 2018 Ultra-low Rate Dry Etching Conditions for Fabricating Normally-off Field Effect Transistors on AlGaN/GaN Heterostructures   Kim Zin-Sig  Solid-State Electronics, v.140, pp.12-17 9 원문
특허 검색결과
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연구보고서 검색결과
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