Subjects :
off-state leakage
논문 검색결과
| Type |
Year |
Title |
Cited |
Download |
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Journal
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2023 |
Improvement of Dynamic On-Resistance in GaN-Based Devices with a High-Quality In Situ SiN Passivation Layer
Jeonggil Kim Micromachines, v.14, no.6, pp.1-10 |
5 |
원문
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Journal
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2023 |
Improvement of Dynamic On-Resistance in GaN-Based Devices with a High-Quality In Situ SiN Passivation Layer
이준혁 Micromachines, v.14, no.6, pp.1-10 |
5 |
원문
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Conference
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2019 |
Normally-off Field Effect Transistors using fine controlled Recess under Gate Area on AlGaN/GaN Heterostructures
Kim Zin-Sig 대한전자공학회 학술 대회 (추계) 2019, pp.215-218 |
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Journal
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2019 |
Growth of AlGaN/GaN Heterostructure with Lattice-matched AlIn(Ga)N Back Barrier
김정길 Solid-State Electronics, v.152, pp.24-28 |
10 |
원문
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Journal
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2018 |
High Figure-of-Merit (V 2 BR /R ON ) AlGaN/GaN Power HEMT With Periodically C-Doped GaN Buffer and AlGaN Back Barrier
이준혁 IEEE Journal of the Electron Devices Society, v.6, pp.1179-1186 |
41 |
원문
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Journal
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2018 |
Normally-off AlGaN/GaN-based MOS-HEMT with Self-terminating TMAH Wet Recess Etching
손동혁 Solid-State Electronics, v.141, pp.7-12 |
9 |
원문
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Journal
|
2018 |
Normally-off AlGaN/GaN-based MOS-HEMT with Self-terminating TMAH Wet Recess Etching
조영우 Solid-State Electronics, v.141, pp.7-12 |
9 |
원문
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Journal
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2018 |
Ultra-low Rate Dry Etching Conditions for Fabricating Normally-off Field Effect Transistors on AlGaN/GaN Heterostructures
Kim Zin-Sig Solid-State Electronics, v.140, pp.12-17 |
9 |
원문
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특허 검색결과
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연구보고서 검색결과
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