Subjects :
Channel thickness
논문 검색결과
| Type |
Year |
Title |
Cited |
Download |
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Journal
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2024 |
Promotion of Processability in a p-Type Thin-Film Transistor Using a Se–Te Alloying Channel Layer
Choi Kyunghee ACS Applied Materials & Interfaces, v.16, no.18, pp.23459-23466 |
7 |
원문
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Journal
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2018 |
Total-Ionizing-Dose Responses of GaN-Based HEMTs With Different Channel Thicknesses and MOSHEMTs With Epitaxial MgCaO as Gate Dielectric
Maruf A. Bhuiyan IEEE Transactions on Nuclear Science, v.65, no.1, pp.46-52 |
26 |
원문
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Conference
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2017 |
Investigation of GaN Channel Thickness on the Channel Mobility in AlGaN/GaN HEMTs Grown on Sapphire Substrate
Sungjae Chang International Symposium on Radio-Frequency Integration Technology (RFIT) 2017, pp.87-89 |
4 |
원문
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Conference
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2016 |
Total Ionizing Dose Effects on GaN-based HEMTs and MOSHEMTs: Effects of Channel Thickness and Epitaxial MgCaO as Gate Dielectric
M. Bhuiyan Semiconductor Interface Specialists Conference (SISC) 2016, pp.1-2 |
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Journal
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2016 |
Dependence of GaN Channel Thickness on the Transistor Characteristics of AlGaN/GaN HEMTs Grown on Sapphire
Sungjae Chang ECS Journal of Solid State Science and Technology, v.5, no.12, pp.N102-N107 |
6 |
원문
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|
Conference
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2015 |
Double-Channel InZnO/AlSnZnInO Thin-Film Transistors with Ultra High Mobility
Choi Ji Hoon International Display Workshops (IDW) 2015, pp.189-190 |
1 |
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Journal
|
2009 |
Effects of ZnO Channel Thickness on the Device Behaviour of Nonvoltile Memory Thin Film Transistor with Double-layered Gate Insulators of Al2O3 and Ferroelectric Polymer
Yoon Sung Min Journal of Physics D : Applied Physics, v.42, no.24, pp.1-6 |
32 |
원문
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특허 검색결과
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연구보고서 검색결과
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