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Journal
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2024 |
Effects of parasitic gate capacitance and gate resistance on radiofrequency performance in LG = 0.15 μm GaN highelectron-mobility transistors for X-band applications
Sungjae Chang ETRI Journal, v.46, no.6, pp.1090-1102 |
4 |
원문
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Conference
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2024 |
Impact of T-gate head size on the device performance and radiation tolerance in LG = 0.15 m GaN-based HEMTs
Sungjae Chang International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2024, pp.283-283 |
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Conference
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2024 |
The Impact of T-Gate Head Size on Radiation Tolerance in GaN HEMTs
Sungjae Chang 한국반도체 학술대회 (KCS) 2024, pp.397-397 |
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Conference
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2022 |
Impact of T-Gate Head Size on Frequency Properties in GaN-based HEMTs
Sungjae Chang International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2022, pp.1-1 |
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Conference
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2017 |
Analysis of the SNR and Sensing Ability of Different Sensor Types in a LIDAR System
Choi Gyu Dong SPIE Remote Sensing 2017 (SPIE 10427), pp.1-8 |
2 |
원문
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Conference
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2007 |
Influence of Gate Head Dimensions on the Device Performance of 0.12um PHEMT
Hokyun Ahn Asia-Pacific Microwave Conference (APMC) 2007, pp.1-4 |
0 |
원문
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Journal
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2007 |
Study on SARs in Head Models With Different Shapes by Age Using SAM Model for Mobile Phone Exposure at 835 MHz
Ae Kyoung Lee IEEE Transactions on Electromagnetic Compatibility, v.49, no.2, pp.302-312 |
20 |
원문
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Conference
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2006 |
Influence of T-gate shape on the device characteristics in 0.12um AlGaAs/InGaAs PHEMT
Hokyun Ahn 한국 반도체 학술 대회 (KCS) 2006, pp.1-2 |
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Conference
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2005 |
The scaled SAM models and SAR for handset exposure at 835 MHz
Ae Kyoung Lee International Microwave Symposium (IMS) 2005, pp.1323-1326 |
0 |
원문
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Journal
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2005 |
835 MHz에서 휴대전화 접촉위치에 대한 축소된 SAM 모델 내 SAR 경향
Ae Kyoung Lee ETRI Journal, v.27, no.2, pp.227-230 |
9 |
원문
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Journal
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2002 |
Human Head Size and SAR Characteristics for Handset Exposure
Ae Kyoung Lee ETRI Journal, v.24, no.2, pp.176-180 |
27 |
원문
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