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Journal
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2018 |
Ultra-low Rate Dry Etching Conditions for Fabricating Normally-off Field Effect Transistors on AlGaN/GaN Heterostructures
Kim Zin-Sig Solid-State Electronics, v.140, pp.12-17 |
9 |
원문
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Conference
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2017 |
P‐10: High‐Density Plasma Sputtered InZnSnO Thin‐Film Transistors Fabricated by Back Channel Etching Method on Flexible Polyimide Substrate
Cho Sung Haeng Society for Information Display (SID) International Symposium 2017, pp.1262-1264 |
6 |
원문
|
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Journal
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2015 |
Highly Stable, High Mobility Al:SnZnInO Back-Channel Etch Thin-Film Transistor Fabricated Using PAN-Based Wet Etchant for Source and Drain Patterning
Cho Sung Haeng IEEE Transactions on Electron Devices, v.62, no.11, pp.3653-3657 |
38 |
원문
|
|
Conference
|
2015 |
The Highly Stable InGaZnO TFTs Deposited by High Density Plasma Sputtering
Cho Sung Haeng International Thin-Film Transistor Conference (ITC) 2015, pp.17-18 |
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|
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Journal
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2013 |
Bilayered Etch-Stop Layer of Al2O3/SiO2 for High-Mobility In-Ga-Zn-O Thin-Film Transistors
Park Sang-Hee Japanese Journal of Applied Physics, v.52, no.10 PART1, pp.1-3 |
6 |
원문
|
|
Conference
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2013 |
High Mobility Oxide TFT for Large Area High Resolution AMOLED
Park Sang-Hee Society for Information Display (SID) International Symposium 2013, pp.18-21 |
10 |
원문
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