Subjects :
Quantum dot laser (QDL)
논문 검색결과
| Type |
Year |
Title |
Cited |
Download |
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Journal
|
2025 |
High Performance 1.3 µm III–V Quantum Dot Lasers Grown on Silicon via all MOCVD Epitaxy
Park Honghwi Laser and Photonics Reviews, v.19, no.19, pp.1-9 |
1 |
원문
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Journal
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2024 |
High-temperature and continuous wave-operation of all-MOCVD grown InAs/GaAs quantum dot laser diodes with highly strained layer and low temperature p-AlGaAs cladding layer
Ho Sung Kim Journal of Alloys and Compounds, v.983, pp.1-10 |
3 |
원문
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|
Journal
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2014 |
High-Power Continuous-Wave Operation of InP-Based InAs Quantum-Dot Laser with Dot-in-a-Well Structure and Strain-Modulating Layer
Byounggu Jo Laser Physics Letters, v.11, no.11, pp.1-6 |
3 |
원문
|
|
Journal
|
2009 |
Enhancement in the Gain of Quantum Dot Laser by Increasing Overlap Integral between Electron and Hole Wave-Functions
조병구 Thin Solid Films, v.517, no.14, pp.3983-3986 |
4 |
원문
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|
Conference
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2006 |
Lasing Characteristics of Self-Assembled InAs/InAlGaAs Quantum Dot Lasers
Choi Byung-Seok International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2006, pp.1-2 |
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Conference
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2005 |
Frequency Response Characteristics of 1.5 μm Quantum Dot Laser Diode
Choi Byung-Seok International Conference on Advanced Materials and Devices (ICAMD) 2006, pp.1-11 |
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Conference
|
2005 |
2.SGbps Operation of 1.551-lm Quantum Dot Laser
Dae Kon Oh European Conference on Optical Communication (ECOC) 2005, pp.627-628 |
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Journal
|
2004 |
Room-temperature operation of InP-based InAs quantum dot laser
Jin Soo Kim IEEE Photonics Technology Letters, v.16, no.7, pp.1607-1609 |
71 |
원문
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특허 검색결과
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연구보고서 검색결과
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