Subject

Subjects : atomically thin

  • Articles (11)
  • Patents (0)
  • R&D Reports (0)
논문 검색결과
Type Year Title Cited Download
Journal 2021 Van der Waals Heterostructure of Hexagonal Boron Nitride with an AlGaN/GaN Epitaxial Wafer for High-Performance Radio Frequency Applications   문석호  ACS Applied Materials & Interfaces, v.13, no.49, pp.58253-59592 22 원문
Journal 2018 Tunable Electron and Hole Injection Enabled by Atomically Thin Tunneling Layer for Improved Contact Resistance and Dual Channel Transport in MoS2/WSe2 van der Waals Heterostructure   칸무하메드  ACS Applied Materials & Interfaces, v.10, no.28, pp.23961-23967 21 원문
Journal 2017 Gas Molecule Sensing of Van Der Waals Tunnel Field Effect Transistors   박재성  Nanoscale, v.9, no.47, pp.18644-18650 34 원문
Journal 2017 Gas Molecule Sensing of Van Der Waals Tunnel Field Effect Transistors   Choi Hongkyw  Nanoscale, v.9, no.47, pp.18644-18650 34 원문
Journal 2017 Gas Molecule Sensing of Van Der Waals Tunnel Field Effect Transistors   명노준  Nanoscale, v.9, no.47, pp.18644-18650 34 원문
Journal 2016 Gate-Tunable Hole and Electron Carrier Transport in Atomically Thin Dual-Channel WSe2/MoS2 Heterostructure for Ambipolar Field-Effect Transistors   이인열  Advanced Materials, v.28, no.43, pp.9519-9525 81 원문
Journal 2013 Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures   이관형  ACS Nano, v.7, no.9, pp.7931-7936 1041 원문
Journal 2013 Controlled Charge Trapping by Molybdenum Disulphide and Graphene in Ultrathin Heterostructured Memory Devices   최민섭  Nature Communications, v.4, pp.1-7 618 원문
Journal 2012 Switching Terahertz Waves with Gate-Controlled Active Graphene Metamaterials   이승훈  Nature Materials, v.11, no.11, pp.936-941 875 원문
Journal 2012 Switching Terahertz Waves with Gate-Controlled Active Graphene Metamaterials   김튼튼  Nature Materials, v.11, no.11, pp.936-941 875 원문
Journal 2012 Switching Terahertz Waves with Gate-Controlled Active Graphene Metamaterials   최무한  Nature Materials, v.11, no.11, pp.936-941 875 원문
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