Subjects :
gate capacitance
논문 검색결과
| Type |
Year |
Title |
Cited |
Download |
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Journal
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2024 |
Effects of parasitic gate capacitance and gate resistance on radiofrequency performance in LG = 0.15 μm GaN highelectron-mobility transistors for X-band applications
Sungjae Chang ETRI Journal, v.46, no.6, pp.1090-1102 |
4 |
원문
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Journal
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2024 |
Improved frequency performance in AlGaN/GaN HEMTs on Si using hydrogen silsesquioxane-assisted gate
Jung Hyunwook Materials Science in Semiconductor Processing, v.170, pp.1-5 |
3 |
원문
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|
Conference
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2023 |
Impact of Parasitic Gate Capacitance on RF Performance in GaN-based HEMTs for X-band Applications
Sungjae Chang The Electrochemical Society (ECS) Meeting 2023, pp.1-1 |
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Journal
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2017 |
6-GHz-to-18-GHz AlGaN/GaN Cascaded Nonuniform Distributed Power Amplifier MMIC Using Load Modulation of Increased Series Gate Capacitance
Shin Dong Hwan ETRI Journal, v.39, no.5, pp.737-745 |
14 |
원문
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|
Journal
|
2010 |
Modified Ion Sensitive Field Effect Transistor Sensors having an Extended Gate on a Thick Dielectric
Chang-Geun Ahn Applied Physics Letters, v.96, no.20, pp.1-3 |
5 |
원문
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|
Conference
|
2009 |
Modified ISFETs Having an Extended Gate on the Thick Dielectric
Chang-Geun Ahn SENSORS 2009, pp.371-374 |
0 |
원문
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특허 검색결과
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연구보고서 검색결과
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