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Journal
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2008 |
Process compatible silicon–germanium–antimony heating layer for high density phase-change memory applications
Lee Seung-Yun Microelectronic Engineering, v.85, no.12, pp.2342-2345 |
5 |
원문
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Journal
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2007 |
Silicon-based Thin Films as Bottom Electrodes in Chalcogenide Nonvolatile Memories
Lee Seung-Yun Applied Surface Science, v.254, no.1, pp.312-315 |
3 |
원문
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Journal
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2007 |
Low Power and High Speed Phase-change Memory Devices with Silicon-germanium Heating Layers
Lee Seung-Yun Journal of Vacuum Science and Technology B, v.25, no.4, pp.1244-1248 |
16 |
원문
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Journal
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2006 |
Simulation study on Heat Conduction of a Nanoscale Phase-Change Random Access Memory Cell
김준호 Journal of Nanoscience and Nanotechnology, v.6, no.11, pp.3474-3478 |
4 |
원문
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Journal
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2006 |
Sb-Se-Based Phase-Change Memory Device With Lower Power and Higher Speed Operations
Yoon Sung Min IEEE Electron Device Letters, v.27, no.6, pp.445-447 |
113 |
원문
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Conference
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2006 |
Phase Change Memory Device with U-shaped Heater (PCM-U)
Park Young Sam European Phase Change and Ovonic Symposium (EPCOS) 2006, pp.1-4 |
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Journal
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2006 |
Writing Current Reduction in Phase Change Memory Device with U-Shaped Heater (PCM-U)
Park Young Sam Japanese Journal of Applied Physics, v.45, no.20, pp.516-518 |
16 |
원문
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Conference
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2005 |
Research and Development on Next-Generation Nonvolatile Memory in ETRI
Byoung Gon Yu Symposium on Semiconductors and Integrated Circuits Technology, pp.1-4 |
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