Subjects :
Flat-band voltage
논문 검색결과
| Type |
Year |
Title |
Cited |
Download |
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Journal
|
2017 |
A Study on N2O Direct Oxidation Process with Re-oxidation Annealing for the Improvement of Interface Properties in 4H-SiC MOS Capacitor
Doohyung Cho Journal of the Korean Physical Society, v.71, no.3, pp.150-155 |
5 |
원문
|
|
Journal
|
2012 |
Subthreshold Characteristics of Pentacene Field-Effect Transistors Influenced by Grain Boundaries
Park Jae Hoon Journal of Applied Physics, v.111, no.10, pp.1-6 |
13 |
원문
|
|
Journal
|
2009 |
Characteristics of Metal-Oxide-Semiconductor (MOS) Device with Er Metal Gate on SiO2 Film
최철종 Microelectronics Reliability, v.49, no.4, pp.463-465 |
2 |
원문
|
|
Journal
|
2007 |
Er and Pt Gate Electrodes Formed on SiO2 Gate Dielectrics
Choi Chel-Jong Electrochemical and Solid-State Letters, v.11, no.2, pp.H22-H25 |
0 |
원문
|
|
Journal
|
2007 |
Effective Metal Work Function of High-Pressure Hydrogen Postannealed Pt-Er Alloy Metal Gate on HfO2 Film
Choi Chel-Jong Japanese Journal of Applied Physics, v.46, no.1, pp.125-127 |
8 |
원문
|
|
Journal
|
2006 |
Effects of High-Pressure Hydrogen Postannealing on the Electrical and Structural Properties of the Pt-Er Alloy Metal Gate on HfO2 Film
Choi Chel-Jong Electrochemical and Solid-State Letters, v.9, no.7, pp.G228-G230 |
1 |
원문
|
|
Conference
|
2005 |
ZnO TFT Fabricated at Low Temperature for Application of Active-matrix Display
Hwang Chi-Sun International Display Workshops (IDW) 2005, pp.1-3 |
5 |
|
특허 검색결과
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Year |
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Family Pat. |
KIPRIS |
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연구보고서 검색결과
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