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Journal
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2011 |
“See-Through” Nonvolatile Memory Thin-Film Transistors Using a Ferroelectric Copolymer Gate Insulator and an Oxide Semiconductor Channel
Yoon Sung Min Journal of the Korean Physical Society, v.58, no.5, pp.1494-1499 |
2 |
원문
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Journal
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2010 |
Fully Transparent Non‐volatile Memory Thin‐Film Transistors Using an Organic Ferroelectric and Oxide Semiconductor Below 200 °C
Yoon Sung Min Advanced Functional Materials, v.20, no.6, pp.921-926 |
110 |
원문
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Journal
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2009 |
Al-Zn-Sn-O thin Film Transistors with Top and Bottom Gate Structure for AMOLED
Cho Doo-Hee IEICE Transactions on Electronics, v.E92-C, no.11, pp.1340-1346 |
8 |
원문
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Conference
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2009 |
Protective Layer on Active Layer of Al-Zn-Sn-O Thin Film Transistors for Transparent AMOLED
Cho Doo-Hee International Meeting on Information Display (IMID) 2009, pp.318-321 |
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Journal
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2009 |
Impact of device configuration on the temperature instability of Al–Zn–Sn–O thin film transistors
Jae Kyeong Jeong Applied Physics Letters, v.95, no.12, pp.123505-1-123505-3 |
60 |
원문
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Conference
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2008 |
Al-Zn-Sn-O Thin Film Transistors with Top and Bottom Gate Structure for AMOLED
Cho Doo-Hee International Display Workshops (IDW) 2008, pp.1625-1628 |
0 |
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